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IRFF423 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - FIELD EFFECT POWER TRANSISTOR - GE

भाग संख्या IRFF423
समारोह FIELD EFFECT POWER TRANSISTOR
मैन्युफैक्चरर्स GE 
लोगो GE लोगो 
पूर्व दर्शन
1 Page
		
<?=IRFF423?> डेटा पत्रक पीडीएफ

IRFF423 pdf
electrical characteristics (Tc = 25° C) (unless otherwise specified)
CHARACTERISTIC
I ISYMBOL MIN
TYP
off characteristics
Drain-Source Breakdown Voltage
=(VGS = OV, 10 2S0 pA)
IRFF422 BVDSS
IRFF423
SOO
450
-
-
Zero Gate Voltage Drain Current
(VOS = Max Rating, VGS = OV, Tc = 25°C)
=(VOS = Max Rating, x 0.8, VGS OV, Tc = 125°C)
loss
-
-
-
-
Gate-Source Leakage Current
(VGS = ±20V)
IGSS
-
-
MAX
-
-
250
1000
±100
UNIT
Volts
pA
nA
on characteristics*
Gate Threshold Voltage
(VOS = VGS, 10 = 2S0 p.A)
On-State Drain Current
(VGS = 10V, VOS = 10V)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 =1.0A)
Forward Transconductance
(VOS = 10V, 10 = 1.0A)
Tc = 25°C VGS(TH)
"
10(ON)
ROS(ON)
gfs
2.0
1.4
-
0.8
-
-
-
-
4.0 Volts
-A
4.0 Ohms
- mhos
dynamic characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = 10V
VOS =25V
f = 1 MHz
Ciss
Coss
Crss
-
-
-
- 400 pF
- 150 pF
- 40 pF
switching characteristics*
Turn-on Delay Time
VOS =225V
Rise Time
Turn-off Delay Time
10 = 1.0A, VGS = 15V
RGEN =son, RGS =12.sn
Fall Time
(RGS (EQUIV.) = 10n)
td(on)
tr
td(off)
tf
-
-
-
-
30 -
25 -
30 -
15 -
ns
ns
ns
ns
source-drain diode ratings and characteristics*
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
(Tc = 25°C, VGS = OV, Is = 1.4A)
Reverse Recovery Time
(Is = 1.6A, dls/dt = 100A/psec, Tc = 125°C)
'Pulse Test: Pulse width :5 300 ps, duty cycle :5 2%
Is -
ISM -
VSO -
trr
ORR
-
-
- 1.4 A
- 5.6 A
- 1.3 Volts
600 -
3.S -
ns
pC
10
8
6
.'
/v
r-.
......
......
10",s
II
""- "- " TTm1.0
II! 0.8
, "~ 0,6
"""... 0,4
"
.......
........
tl
I
;) 0.2
o
Z
~ 0.1
" 0,08
90,06
0,04
TC =2S'C
TJ =1S0'C MAX,
RlhJC =6,2S KIW
" II
10ms
1" " I I
""- "...... lOOms
DC
SINGLE PULSE
0,02
I-"'-
OPERATION IN THIS
AREA IS LIMITED
IRFF422-
BY RDSlon)
0,01
IRFF423--
1,0 4 6 8 10 20 40 60 60 100 200 400 600
VDS. DRAIN-TO-SOURCE VOLTAGE (VOLTS)
MAXIMUM SAFE OPERATING AREA
2,4 I I I I
2,2 _
CONDITIONS:
= =ROS(ON) CONDITIONS: 10 1,0 A. VGS 10V
2,0 r - - = =VGS(TH) CONDITIONS: 10 250MA. VOS VGS -
c
~ 1.8
::;
~ 1,6
- - -a:
51 1.4
;:
~ 1.2
">cz 1.0
/
/
-:. 0,8
--o2
;; 0.6
a:"
/
I--"'"
0.4
V
-./V
'"
r-- --
I, I /
ROSIONI
/
V
V
-:::~
-
.....
0,2
o
-40
o 40 80
TJ JUNCTION TEMPERATURE ('C)
120
160
TYPICAL NORMALIZED RDSIONI AND VGSITHI VS. TEMP.
296

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डाउनलोड[ IRFF423 Datasheet.PDF ]


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