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IRFF332 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - FIELD EFFECT POWER TRANSISTOR - GE

भाग संख्या IRFF332
समारोह FIELD EFFECT POWER TRANSISTOR
मैन्युफैक्चरर्स GE 
लोगो GE लोगो 
पूर्व दर्शन
1 Page
		
<?=IRFF332?> डेटा पत्रक पीडीएफ

IRFF332 pdf
electrical characteristics (Tc = 250 C) (unless otherwise specified)
I I ICHARACTERISTIC
SYMBOL MIN
TYP
off characteristics
Drain-Source Breakdown Voltage
(VGS =OV, 10 =250 pA)
IRFF332 BVDSS
IRFF333
400
350
-
-
Zero Gate Voltage Drain Current
(VOS =Max Rating, VGS =OV, Te = 25°C)
(VOS =Max Rating, x 0.8, VGS =OV, Te =125°C)
Gate-Source Leakage Current
(VGS =±20V)
losS
-
-
IGSS
-
-
-
-
on characteristics*
Gate Threshold Voltage
(VOS =VGS, 10 =250/LA)
On-State Drain Current
(VGS =10V, VOS =10V)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 =2.0A)
Forward Transconductance
(VOS =10V, 10 =2.0A)
Te =25°C VGS(TH)
10(ON)
ROS(ON)
gfs
dynamic characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS =OV
VOS =25V
f =1 MHz
Ciss
Coss
C rss
switching characteristics*
Turn-on Delay Time
Rise Time
VOS =175V
10 =2.0A, VGS =15V
Turn-off Delay Time
RGEN =50n, RGS = 12.5!l
Fall Time
(RGS (EQUIV.) =100)
td(on)
tr
td(off)
tf
source-drain diode ratings and characteristics*
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
(Te =25°C, VGS =OV, Is =3.0A)
Reverse Recovery Time
(Is =3.5A, dls/dt =100A/psec, Te =125°C)
'Pulse Test: Pulse width:::; 300 /IS, duty cycle :5 2%
Is
ISM
VSO
trr
ORR
2.0
3.0
-
1.S
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
.-
15
20
30
20
-
-
-
SOO
4.0
MAX
UNIT
-
-
250
1000
±100
Volts
pA
nA
4.0 Volts
-A
1.5 Ohms
- mhos
900 pF
300 pF
80 pF
- ns
- ns
- ns
- ns
3.0 A
12 A
1.5 Volts
- ns
- pC
20
12
I10 1'0..
" "8
6
r= 2
!1
5 ~::
I 0.4
6
~ 0.2
~ 0.1
90.08
0'.06
f~-
0.04 f-
TC= 25'C
TJ= 150'CMAX.
R'hJC = 5.0 KJW
SINGLE PULSE
........
i'-....
........ ........
i' .......r-..
""'- t"-.. ['....
....... .......
:....... :-......
i" i'-....
"'"
10"s
100('
1m,
10ms
I
100ms
DCJ
OPERATION IN THIS AREA
0.02 r-IS LIMITED BY ROS{on)
0.01 I I II I
4 6 8 10
20
rli'i"i--IJFF332
40 60 eo 100 200 400 600
YOS, DRAIN-TO·SOURCE VOLTAGE (YOLTS)
MAXIMUM SAFE OPERATING AREA
2.4
2.2
2.0
c
~ 1.8
::;
~ 1.6
a:
~ 1.4
~ 1.2
~
> 1.0
C
Z
<l 0.8
"~
a:o
0.6 1 -
0.4
( I II
CONDITIONS:
=ROS(ON) CONOITIONS: 10 = 2.0 A, VGS 10V
= L 'VGS(TH) CONOITIONS: 10 250~A, VOS = VGS
V. /
...V
........ /
. /10'
- -,.............. r--
- --........
/ROSIDNI
-t--
VGS(THI-
~
0.2
o
-40
o 40 80
TJ , JUNCTION TEMPERATURE {'CI
120
160
TYPICAL NORMALIZED RDSIONI AND VGSITHI VS. TEMP.
292

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डाउनलोड[ IRFF332 Datasheet.PDF ]


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