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IRFF322 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - FIELD EFFECT POWER TRANSISTOR - GE

भाग संख्या IRFF322
समारोह FIELD EFFECT POWER TRANSISTOR
मैन्युफैक्चरर्स GE 
लोगो GE लोगो 
पूर्व दर्शन
1 Page
		
<?=IRFF322?> डेटा पत्रक पीडीएफ

IRFF322 pdf
=electrical characteristics (Tc 25° C) (unless otherwise specified)
I I ICHARACTERISTIC
SYMBOL MIN
TYP
off characteristics
Drain-Source Breakdown Voltage
(VGS =OV, 10 =250 pA)
IRFF322 BVDSS
IRFF323
400
350
-
-
Zero Gate Voltage Drain Current
(VOS =Max Rating, VGS =OV, Tc =25°C)
= = =(VOS Max Rating, x 0.8, VGS OV, Tc 125°C)
Gate-Source Leakage Current
(VGS =±20V)
loss
IGSS
-
-
-
-
-
-
MAX
-
-
250
1000
±100
UNIT
Volts
pA
nA
on characteristics·
Gate Threshold Voltage
(VOS =VGS, 10 =250 JAA)
On-State Drain Current
(VGS =10V, VOS =10V)
Static Drain-Source On-State Resistance
(VGS =10V, 10 =1.25A)
Forward Transconductance
(VOS =10V, 10 =1.25A)
=Tc 25°C VGS(TH)
10(ON)
ROS(ON)
gfs
2.0
2.0
-
0.8
-
-
-
-
4.0 Volts
-A
2.5 Ohms
- mhos
dynamic characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS =10V
VOS =25V
f =1 MHz
Ciss
Coss
Crss
switching characteristics·
Turn-on Delay Time
Rise Time
VOS =175V
10 =1.25A, VGS =15V
Turn-off Delay Time
RGEN =500, RGS =12.50
Fall Time
=(RGS (EQUIV.) 100)
tel (on)
tr
td(off)
tf
source-drain diode ratings and characteristics·
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
(Tc =25°C, VGS =OV, Is =2.0A)
Reverse Recovery Time
= = =(Is 2.5A, dls/dt 100A/psec, Tc 125°C)
'Pulse Test: Pulse width::;; 300 I1s, duty cycle::;; 2%
Is
ISM
VSO
trr
ORR
-
-
-
-
-
-
-
-
-
-
-
-
- 600 pF
- 200 pF
- 40 pF
20 -
25 -
50 -
25 -
ns
ns
ns
ns
- 2.0 A
- 8A
- 1.5 Volts
450 -
3.1 -
ns
pC
20
10
8
6 1'0. 10",,_
i[
~2
:Ii
~1
.. 0.8
iii 0.6
~ 0.4
IG
0.2
,
,,-
,,-'
_ 0.1
90.08
0.06
-
-
-
0.04 -
TC=2S'C
TJ=lSO'CMAX.
RthJC = 6.2SK/W
SINGLE PULSE
.......... ..........
" .......... ......1'-
.......
.....
'" '"'"
.......
............ ........
............... ........
I
lOOi"
lms-
10ls
I
100ms
DC
0.02 -
0.01
OPERATION IN THIS AREA
I I TnIS LIMITED BY ROS(on)
-IJFF322
I - I rF3j 3
4 6 8 10 20 40 eo 80100 200 400 600
VDS. DRAIN-TO-SOURCE VOLTAGE (VOLTS)
MAXIMUM SAFE OPERATING AREA
2.4 r--I~- ' - ' I - ' I ' - - - " - I - ' - - ' I - " " - - - ' ' - - - ' - V ' - '
2.2 I---
CONDITIONS:
IR I /
2.0 -
RDS(ON) CONDITIONS: ID = 1.25 A. VGS = IOV "
= =VGS(TH) CONDITIONS: ID 250,.A. VDS VGS - DSIONI +--+---i
o 1.81---I--+---+--+--t---t---t--+V/ ~+-I---i
'"~ 1.61---+-+--+--t--t--+-+"'-7/9-__-_+____;
:~:; 1.41---+-+--+--t--t--+.....".9--_+--t--1---i
a: ; ' /
~ '.21---I::_=--+r----+_--t--/-+V"~+--+-+---I--+----;
; ; V~ l.ol---+-+---+=~o:::::;..:;:1::::--+-+--+-+-l---l
~.. 0.81---+l,....---"-+I--"""'--"'l'---I-r--I-----f---f=-...._=-v~~
:i1 0.6 __
lzi! 0.41---I--+---+--+--t---I--+---+--+--1----;
c
a:
0.21---+-+--+--t--t--+-+--+--t--1----l
TJ. JUNCTION TEMPERATURE ('C)
TYPICAL NORMALIZED ROSIONI AND VGSITHI VS. TEMP.
288

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