DataSheet.in

IRFF313 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - FIELD EFFECT POWER TRANSISTOR - GE

भाग संख्या IRFF313
समारोह FIELD EFFECT POWER TRANSISTOR
मैन्युफैक्चरर्स GE 
लोगो GE लोगो 
पूर्व दर्शन
1 Page
		
<?=IRFF313?> डेटा पत्रक पीडीएफ

IRFF313 pdf
electrical chC!racteristics (Tc = 250 C) (unless otherwise specified)
I I ICHARACTERISTIC
SYMBOL MIN
TVP
off characteristics
Drain-Source Breakdown Voltage
(VGS =OV, 10 =250 pA)
IRFF312 BVDSS
IRFF313
400
350
-
-
Zero Gate Voltage Drain Current
(VOS =Max Rating, VGS =OV, TC =25°C)
(VOS =Max Rating, x 0.8, VGS =OV, TC =125°C)
Gate-Source Leakage Current
(VGS =±20V)
lOSS -
-
IGSS
-
-
-
-
MAX
UNIT
-
-
250
1000
±100
Volts
pA
nA
on characteristics*
Gate Threshold Voltage
(VOS =VGS, 10 =250 p.A)
On-State Drain Current
(VGS =10V, VOS =10V)
Static Drain-Source On-State Resistance
(VGS =10V, 10 =0.8A)
Forward Transconductance
(VOS =10V, 10 =0.8A)
Tc =25°C VGS(TH)
2.0
10(ON)
ROS(ON)
gfs
1.15
-
0.4
-
-
-
-
4.0 Volts
- Amp
5.0 Ohms
- mhos
dynamic characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS =OV
VOS =25V
f =1 MHz
Ciss
Coss
C rss
-
-
-
385 600
70 200
12 40
pF
pF
pF
switching characteristics*
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VOS =175V
10 =0.8A, VGS =15V
RGEN =50n, RGS =12.50.
(RGS (EQUIV.) =100.)
td(on)
tr
td(off)
tf
-
-
-
-
3-
10 -
5-
8-
ns
ns
ns
ns
source-drain diode ratings and characteristics*
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
(Tc =25°C, VGS =OV, Is =1.15A)
IS
ISM
VSO
Reverse Recovery Time
(Is =1.35A, dis/dt =100A/JiS, Max., TC =125°C)
trr
·Pulse Test: Pulse width :s; 300 f../S, duty cycle :s; 2%
-
-
-
-
-
1.15
A
- 4.5 A
- 1.5 Volts
380 -
ns
10
B
6
~ 1.0
Ie 0.8
i~ 0.6
0.4
a: !;'
~ 0.2
o
z
~ O.1
'"
I
'",K"K. "-
10'1'
". r--...", "'- " l00~_
I'
"- "- I'...
" r,i'-r-...""-
" ,"I'~""-
lml-
10!S
" 0.0B
§ 0.06
0.04
TC =25'C
r-- TJ =150'C MAX.
RlhJC =8.33 KfW
SINGLE PULSE
" I100,ms
DC
0.02
-=OPERATION IN THIS
AREA IS LIMITED
BYRDS(on)
0.01
:::::=~~~~~ I
1.0 4 6 B 10 20 40 60 80100 200 400 600
VOS, ORAIN-T0-50URCE VOLTAGE (VOLTS)
MAXIMUM SAFE OPERATING AREA
2.4 I I
II I
2.2 I--
CONDITIONS:
= = I, 1 /ROS(ONbCONDITIONS: 10 O.SA, VGS 10V
= =2.0 I-- VGS(TH) ONOITIONS: 10 250pA, VOS VGS - ROSIONI
/
c
~ 1.8
:::;
L
/
~ 1.6
a!i:! 1.4
;;
~ 1.2
"> 1.0
r---r---I-
-Cz
~ 0.8
oz
........... .....
~ 0.6
a:
/
0.4
V
-/'
". /
r--
~~
f-
r-
-
0.2
o
-40
o 40 60
TJ , JUNCTION TEMPERATURE ('C)
120
160
TYPICAL NORMALIZED RDSIONI AND VGSITHI VS. TEMP.
284

विन्यास 2 पेज
डाउनलोड[ IRFF313 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IRFF3101.35A/ 400V/ 3.600 Ohm/ N-Channel Power MOSFETIntersil Corporation
Intersil Corporation
IRFF310HEXFET TRANSISTORSInternational Rectifier
International Rectifier


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English