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IRFF133 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - FIELD EFFECT POWER TRANSISTOR - GE

भाग संख्या IRFF133
समारोह FIELD EFFECT POWER TRANSISTOR
मैन्युफैक्चरर्स GE 
लोगो GE लोगो 
पूर्व दर्शन
1 Page
		
<?=IRFF133?> डेटा पत्रक पीडीएफ

IRFF133 pdf
=electrical characteristics (Tc 25° C) (unless otherwise specified)
I I ICHARACTERISTIC
SYMBOL MIN
TYP
off characteristics
Drain-Source Breakdown Voltage
(VGS =OV, 10 =250 pA)
Zero Gate Voltage Drain Current
(VOS =Max Rating, VGS =OV, Tc =25°C)
(VOS =Max Rating, x 0.8, VGS =OV, Tc =125°C)
Gate-Source Leakage Current
(VGS =±20V)
IRFF132
IRFF133
BVDSS
lOSS
IGSS
100
60
-
-
-
-
-
-
-
-
MAX
--
250
1000
±100
UNIT
Volts
pA
nA
on characteristics*
Gate Threshold Voltage
(VOS =VGS, 10 =250 p.A)
On-State Drain Current
(VGS =10V, VOS =10V)
Static Drain-Source On-State Resistal1ce
(VGS =10V, 10 =4.0A)
Forward Transconductance
(VOS =10V, 10 =4.0A)
Tc =25°C VGS(TH)
10(ON)
ROS(ON)
gfs
2.0
7.0
-
2.4
-
-
-
-
4.0 Volts
-A
0.25 Ohms
- mhos
dynamic characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS =OV
VOS =25V
f =1 MHz
Ciss
Coss
Crss
-
-
-
- 800 pF
- 500 pF
- 150 pF
switching characteristics*
Turn-on Delay Time
Rise Time
Turn-off Delay Time
VOS =30V
10 =4A, VGS =15V
RGEN =500, RGS =12.50
Fall Time
(RGS (EQUIV.) =100)
td(on)
tr
td(off)
tf
-
-
-
-
30 -
eo -
50 -
80 -
ns
ns
ns
ns
source-drain diode ratings and characteristics*
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
(Tc =25°C, VGS =OV, Is = 7A)
Reverse Recovery Time
(IS =8A, dls/dt =100A/psec, TC =125°C)
'Pulse Test: Pulse width? 300 ps, duty cycle:::; 2%
Is
ISM
VSO
trr
ORR
-
-
-
-
-
- 7A
- 28 A
- 2.3 Volts
300 -
1.5 -
ns
pC
100
80
• 60
40
20
I :ili 10
!;; 4
wa:
!!i 2
u
i!i
~ ~:~
9 0.6
"-
"/
/
r-,.
r"-~
"'- ".......
.'"r"-r-,.
.........
~
'"" "'"TC=25°C
10,..
" 100 ••
1m.
" 10 m.
100ms
TJ " 150'C MAX.
0.4 R'hJC " 5.0 KIW
SINGLE PULSE
:-. DC
0.2 -=OPERATION IN THIS
AREA IS LIMITED
BVROS(on)
0.1
- i-!RFFI32
r-IRFFI33
1.0
4 6 8 10
20 40 60 80 100 200
YO&' ORAIN-TO-SOURCE YOLTAGE (YOLTS)
400 600
MAXIMUM SAFE OPERATING AREA
2.4
I I I I I JJ
2.2 CONDITIONS:
ROS(ON) CONDITIONS: 10 = 4.0 A, VGS = 10V
2.0 VGS(TH) CONDITIONS: 10 = 250pA. VOS = VGS
S 1.8
N
~ 1.6
:;;
-..~ 1.4
z
~ 1.2
->'tj 1.0
-:ci 0.8
- - -2~ 0.6
r-- .--
-....-/
......V
r--
V
....- /ROSIONI
./
f::::--f-----
VGSITHI_
c
a: 0.4
0.2
40 o 40 80 120 160
TJ• JUNCTION TEMPERATURE ('C)
TYPICAL NORMALIZED ROSIONI AND VGSITHI VS. TEMP.
268

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