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IRFF130 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - FIELD EFFECT POWER TRANSISTOR - GE

भाग संख्या IRFF130
समारोह FIELD EFFECT POWER TRANSISTOR
मैन्युफैक्चरर्स GE 
लोगो GE लोगो 
पूर्व दर्शन
1 Page
		
<?=IRFF130?> डेटा पत्रक पीडीएफ

IRFF130 pdf
=electrical characteristics (Tc 25° C) (unless otherwise specified)
CHARACTERISTIC
I I ISYMBOL MIN
TYP
off characteristics
.Drain-Source Breakdown Voltage
(VGS = OV, 10 = 25OI1A)
Zero Gate Voltage Drain Current
(VOS = Max Rating, VGS = OV, Tc = 25°C)
(VOS = Max Rating, x O.B, VGS = OV, Tc = 125°C)
Gate-Source Leakage Current
(VGS = ±20V)
IRFF130
IRFF131
BVDSS
loss
IGSS
100
60
-
-
-
--
--
-
MAX
UNIT
-
-
250
1000
±100
Volts
I1A
nA
on characteristics*
Gate Threshold Voltage
(VOS = VGS, 10 = 250 p,A)
On-State Drain Current
(VGS = 10V, VOS = 10V)
Static Drain-Source On-State Resistance
(VGS =10V, 10 = 4.0A)
Forward Transconductance
(VOS = 10V, 10 = 4.0A)
Tc = 25°C VGS(TH)
10(ON)
ROS(ON)
gfs
dynamic characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = OV
VOS = 25V
f = 1 MHz
Ciss
Coss
Crss
switching characteristics*
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VOS = 30V
10 = 4.0A, VGS = 15V
RGEN = 500, RGS = 12.50
(RGS (EQUIV.) = 100)
td(on)
tr
td(off)
tf
source-drain diode ratings and characteristics*
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
. (Tc = 25°C, VGS = OV, Is = BA)
Reverse Recovery Time
(Is = BA, dls/dt = 100All1sec, Tc = 125°C)
'Pulse Test: Pulse width:::; 300 p.s, duty cycle:::; 2%
Is
ISM
VSO
trr
ORR
2.0
B.O
-
2.4
-
-
-
-
-
-
-
-
-
-
-
-
- 4.0 Volts
-- A
- 0.1B Ohms
- - mhos
- BOO pF
- 500 pF
- 150 pF
30 -
BO -
50 -
BO -
ns
ns
ns
ns
- BA
- 32 A
- 2.5 Volts
300 -
1.5 -
ns
I1C
100
80
60
40
;'><.:
" "" ""-"20 /"'" r--.~
(,: "/
10~s
.... 100 ••
m4
a:
§2
u
Z
~ 1.0
c 0.8
g 0.6
0.4
........
TC= 25°0
eTJ = 1500 MAX.
R'hJC • 5.0 K/W
SINGLE PULSE
I'...
"-.... ........
"" "".......
1m.
:-. 10m.
100ms
r--. DC
0.2
r-=0PERATION IN THIS
AREA IS LIMITED
BYADS(on)
~:=~~~~
O. 1
1.0 4 6 8 10 20 40 60 80 100 200
VDS. DRAIN-TO-SOURCE VOLTAGE (VOLTS)
400 600
MAXIMUM SAFE OPERATING AREA
2.4 I I I I I I
-2.2
CONDITIONS:
-2.0
= =ROS(ON) CONDITIONS: 10 4.0 A. VGS 10V
= =VGS(TH) CONDITIONS: 10 250~A. VOS VGS
~ 1.8
N
L
,,/
~ 1.6
:;;
gs 1.4
"~ 1.2 -""'-
->C) t.O
-.....-o
~ O.B
-- - - r-~ 0.6
r--
. / VROSIONI
/
...-...rV---r---
VGSITHI_
rl
0: 0.4
O.2
-40 0 40 BO 120 160
TJ' JUNCTION TEMPERATURE ('CI
TYPICAL NORMALIZED ROSIONI AND VGSITHI VS. TEMP.
266

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डाउनलोड[ IRFF130 Datasheet.PDF ]


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