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IRF613 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - FIELD EFFECT POWER TRANSISTOR - GE

भाग संख्या IRF613
समारोह FIELD EFFECT POWER TRANSISTOR
मैन्युफैक्चरर्स GE 
लोगो GE लोगो 
पूर्व दर्शन
1 Page
		
<?=IRF613?> डेटा पत्रक पीडीएफ

IRF613 pdf
=electrical characteristics (Tc 25° C) (unless otherwise specified)
I I ICHARACTERISTIC
SYMBOL MIN
TYP
off characteristics
Drain-Source Breakdown Voltage
(VGS =OV, 10 = 250 pA)
IRF612 BVDSS
IRF613
200
150
-
-
Zero Gate Voltage Drain Current
(VOS =Max Rating, VGS = OV, Tc =25°C)
. (VOS =Max Rating, x 0.8, VGS =OV, Tc =125°C)
Gate-Source Leakage Current
(VGS =±20V)
loSS
IGSS
-
-
-
-
-
-
on characteristics*
Gate Threshold Voltage
(VOS =VGS, 10 =250 J.LA)
On-State Drain Current
(VGS =10V, VOS =10V)
Static Drain-Source On-State Resistance
(VGS =10V, 10 =1.25A)
Forward Transconductance
(VOS =10V, 10 =1.25A)
Tc =25°C VGS(TH)
2.0
10(ON)
ROS(ON)
gfs
2.0
-
0.72
-
-
1.5
0.75
dynamic characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = OV
VOS =25V
f = 1 MHz
Ciss
Coss
Crss
switching characteristics* .
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VOS = 90V
10 = 1.25A, VGS =15V
RGEN =500., RGS = 12.50.
(RGS (EQUIV.) =100.)
td(on)
tr
td(off)
tf
source-drain diode ratings and characteristics*
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
(Tc =25°C, VGS = OV, Is =2.0A)
Reverse Recovery Time
(Is =2.5A, dls/dt =100A/psec, Tc =125°C)
'Pulse Test: Pulse Width :s; 300 JJS, duty cycle :s; 2%
IS
ISM
VSO
trr
ORR
-
-
-
-
-
-
-
-
-
-
-
-
120
40
10
5
15
10
10
-
-
0.8
150
0.9
MAX
UNIT
-
-
250
1000
±500
Volts
pA
nA
4.0 Volts
-A
2.4 Ohms
- mhos
150 pF
80 pF
25 pF
- ns
- ns
- ns
- ns
2.0 A
8.0 A
1.8 Volts
- ns
- pC
100
80
60
40
<ii 20
w
0:
:~ 10
~
/ ' ........
I-
"Zw 4
0:
'"~ 2
u
z
J' "r--..<i 1.0
~
,
.......
"
~
f"'.,..
:--""r-.., I" 100",
~~
~ O.B
"C
"-
0.6
0.4
~
OPERATION IN THIS AREA
-MAY BE LIMITED BY ROSIONI
r-- ~0.2 SiNGLE PULSE I I ,.
1m'
~ _ IRF612
~, - i-- 1RFj13
lOms
""0.1
1
Tc"2SoC
4 6 B 10
20
~ 100m'
OC
40 60 BO 100 200 400 600 1000
VOS' DRAIN-SOURCE VOLTAGE (VOLTSI
MAXIMUM SAFE OPERATING AREA
2.4
-2.2
-2.0
o
~ 1.8
:;
;) 1.6
0:
~ 1.4
i
~ 1.2
"~ 1.0
z
~ O.B
z
~ 0.6
Q
0:
0.4
0.2
I I I I .I I I
- CONDmONS:
ROS(ON) CONDITIONS: '0" 1.25 A. VGS" 10V
,/
= = V V- VGS(TH) CONDITIONS: 10 250pA. VOS VGS
ROSIONI
/'
V
....-i-"'"
- -.........- r--t---_
-f--
---VGSITHI - ~
-40 o .40 so 120 160
TJ. JUNCTION TEMPERATURE (Oe)
TYPICAL NORMALIZED ROSIONI AND VGSITHI VS. TEMP.
192

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डाउनलोड[ IRF613 Datasheet.PDF ]


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