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VN1206B डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement-Mode MOS Transistors - Siliconix

भाग संख्या VN1206B
समारोह N-Channel Enhancement-Mode MOS Transistors
मैन्युफैक्चरर्स Siliconix 
लोगो Siliconix लोगो 
पूर्व दर्शन
1 Page
		
<?=VN1206B?> डेटा पत्रक पीडीएफ

VN1206B pdf
VN1206B, VN1206D
ELECTRICAL CHARACTERISTICS1
PARAMETER
STATIC
Drain-Source
Breakdown Voltage
Gate Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage
Drain Current
On-State Drain
Current 3
Drain-Source
On-Reslstance3
~~~~:6~nductance 3
Common Source
Output Conductance3
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
SWITCHING
Turn-On Time
Turn-Off Time
SYMBOL
V(BR)OSS
VGS(th)
IGSS
loss
10CON)
rOSCON)
gFS
gos
C lss
Coss
C rss
tdCON)
tr
tdCOFF)
tf
TEST CONDITIONS
VGS = 0 V, 10 = 100 Jl.A
Vos = VGS, 10 = 1 mA
Vos = 0 V
VGs =±15V
I To =125°C
Vos = 120 V
VGS = 0 V
I To = 125°C
Vos = 10 V, VGS = 10 V
VGs=2.5V, 10 =0.1 A
VGS = 10 V
10=0.5V
I To = 125°C
VOS = 10 V, 10 = 0.5 A
Vos =7.5V,10=0.lA
Vos = 25 V
VGS = 0 V
f = 1 MHz
Voo = 60 V, RL= 150.0.
10 = 0.4 A, VGEN = 10 V
RG = 25.0.
(Switching time Is essentially
Independent of operating
temperature)
NOTES: 1. To = 25°C unless otherwise noted.
2. For design aid only, not subject to production testing.
3. Pulse test; PW = 300.us, duty cycle :$ 2% .
TYp2
~fCr
Silicanix
incorporatec
LIMITS
VN1206
MIN MAX UNIT
145 120
1,4 0,8
2
V
±1
+5
0.001
0.5
+100
+500
10
500
nA
Jl.A
1,6 1
A
6 10
3.4 6 .0.
7 14.8
425 300
mS
400 .uS
35 125
15 50 pF
2 20
38
2.5 8
ns
7 18
2.5 12
6-76

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