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VN0808L डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement-Mode MOS Transistors - Siliconix

भाग संख्या VN0808L
समारोह N-Channel Enhancement-Mode MOS Transistors
मैन्युफैक्चरर्स Siliconix 
लोगो Siliconix लोगो 
पूर्व दर्शन
1 Page
		
<?=VN0808L?> डेटा पत्रक पीडीएफ

VN0808L pdf
VN0808 SERIES
ELECTRICAL CHARACTERISTICS1
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
Drain-Source
Breakdown Voltage
Gate Threshold
Voltage
V(BR)DSS
VGS(th)
VGs =OV,I D =10.l1A
VDS = VGS, ID = 1 mA
Gate-Body Leakage
Zero Gate Voltage
Drain Current
On-State Drain
Current 3
Drain-Source
On-Reslstance3
~~~:~~nductance3
Common Source
Output Conductance3
DYNAMIC
IGSS
IDSS
ID(ON)
rDS(ON)
gFs
gos
VDS = 0 V, VGS = ±15 V
VDS = 80 V
VGS = 0 V
I T = 125°C
VDS = 10 V, VGS = 10 V
VGS = 5 V, I D = 0.3 A
VGs =10V
ID = 1 A
14TJ = 125°C
VDS = 10 V, ID = 0.5 A
VDS = 10 V, ID = 0.1 A
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
C lss
Coss
C rss
VDS = 25 V
VGS = 0 V
f = 1 MHz
SWITCHING
Turn-On Time
Turn-Off Time
tON
tOFF
VDD = 25 V, R L = 23.0.
ID=lA,VGEN =10V
RG=25.n
(Switching time Is essentially Independent
of operating temperature)
NOTES: 1. T A = 25°C unless otherwise noted.
2. For design aid only, not subject to production testing.
3. Pulse test; PW = 300.l1s, duty cycle S 2%.
4. This parameter has been revised from previous datasheet.
TYp2
H Siliconix
incorporated
LIMITS
VN0808
MIN MAX UNIT
120 80
V
1.6 0.8
2
±1 ±100 nA
0.03
0.3
10
.l1A
500
1.8 1.5
A
4.2
3.6 4 .0.
6.8 8
350 170
mS
225 jJ.S
35 50
15 40 pF
2 10
6 10
ns
8 10
6-74

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डाउनलोड[ VN0808L Datasheet.PDF ]


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