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VN10LE डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement-Mode MOS Transistors - Siliconix

भाग संख्या VN10LE
समारोह N-Channel Enhancement-Mode MOS Transistors
मैन्युफैक्चरर्स Siliconix 
लोगो Siliconix लोगो 
पूर्व दर्शन
1 Page
		
<?=VN10LE?> डेटा पत्रक पीडीएफ

VN10LE pdf
VN0610LL, VN10LE, VN10LM
ELECTRICAL CHARACTERISTICS1
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
Drain-Source
Breakdown Voltage
Gate Threshold
Voltage
V(BR)OSS
VGS(th)
VGS = 0 V, 10 = 100JJ.A
Vos = VGs, 10 = 1 mA
Gate-Body Leakage
Zero Gate Voltage
Drain Current
On-State Drain
Current 4
Drain-Source
On-Reslstance3
~~~~;6~nductance 3
Common Source
Output Conductance3
DYNAMIC
IGSS
loss
10(ON)
rOS(ON)
gFS
gos
Vos = 0 V, VGS = ±30 V 5
VOS = 50 V, VGS = 0 V
Vos = 50 V, VGS = 0 V, TJ = 125·C
VOS = 10 V, VGS = 10 V
VGS = 5 V, ID = 0.2 A
VGS = 10 V
10 = 0.5 A
I TJ = 125·C
Vos=10V,10=0.5A
Vos = 5 V, 10 = 50 mA
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
C 1SS
Coss
erss
VOS = 25 V
VGS = 0 V
f = 1 MHz
SWITCHING
Turn-On Time
Turn-Off Time
tON
tOFF
Voo-15 V, R L - 23.0.
10=0.6A,VGEN =10V
RG= 25.0.
(Switching time Is essentially Independent
of operating temperature)
NOTES:
=1. T A 25·C unless otherwise noted, Tc = 25·C for VN10LE.
2. For design aid only, not subject to production testing.
3. Pulse test; PW = 300 J.ls, duty cycle ~ 20/0.
=4. Pulse width limited by maximum Junction temperature.
5. Vas ±20 V for VN10LE.
TYp2
ICrSiliconix
~ incorporated
LIMITS
ALL
MIN MAX UNIT
70 60
2.3 0.6
V
2.5
±1 ±100 nA
0.02
1
10
J.lA
500
1000
750
mA
5 7.5
2.5 5 .0.
4.4 9
230 100
mS
500 J.lS
16 60
11 25 pF
25
7 10
ns
7 10
6-72

विन्यास 2 पेज
डाउनलोड[ VN10LE Datasheet.PDF ]


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