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HM6N10PR डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode Power MOSFET - H&M Semiconductor

भाग संख्या HM6N10PR
समारोह N-Channel Enhancement Mode Power MOSFET
मैन्युफैक्चरर्स H&M Semiconductor 
लोगो H&M Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=HM6N10PR?> डेटा पत्रक पीडीएफ

HM6N10PR pdf
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
IGSS
VGS(th)
RDS(ON)
gFS
Clss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS
VGS=±20V,VDS=0V
HM6N10PR
- - ±100 nA
VDS=VGS,ID=250μA
VGS=10V, ID=5A
VDS=5V,ID=2.9A
1.2 1.8
- 110
-8
2.5
140
-
V
m
S
VDS=25V,VGS=0V,
F=1.0MHz
- 690
- 120
- 90
-
-
-
PF
PF
PF
VDD=30V,ID=2A,RL=15
VGS=10V,RG=2.5
VDS=30V,ID=3A,
VGS=10V
- 11
- 7.4
- 35
- 9.1
- 15.5
- 3.2
- 4.7
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
VGS=0V,IS=6A
- - 1.2
--
6
V
A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to product
Page 2
Shenzhen H&M Semiconductor Co.Ltd
http//www.hmsemi.com
v1.0

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डाउनलोड[ HM6N10PR Datasheet.PDF ]


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