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HM6400 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode Power MOSFET - H&M Semiconductor

भाग संख्या HM6400
समारोह N-Channel Enhancement Mode Power MOSFET
मैन्युफैक्चरर्स H&M Semiconductor 
लोगो H&M Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=HM6400?> डेटा पत्रक पीडीएफ

HM6400 pdf
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
IDSS
IGSS
VGS(th)
Drain-Source On-State Resistance
RDS(ON)
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
gFS
Clss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
VDS=30V,VGS=0V
VGS=±12V,VDS=0V
VDS=VGS,ID=250μA
VGS=2.5V, ID=4A
VGS=4.5V, ID=2.9A
VGS=10V, ID=2.9A
VDS=5V,ID=2.9A
VDS=15V,VGS=0V,
F=1.0MHz
VDD=15V,ID=2.9A
VGS=10V,RGEN=3
VDS=15V,ID=5.8A,
VGS=4.5V
VGS=0V,IS=2.9A
HM6400
- - 1 μA
- - ±100 nA
0.7 0.9
- 45
- 34
- 31
10 -
1.4
59
45
41
-
V
m
m
m
S
- 623
- 99
- 77
-
-
-
PF
PF
PF
- 3.3
- 4.8
- 26
-4
- 9.5
- 1.5
-3
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
- 0.75 1.2
- - 2.9
V
A
Shenzhen H&M Semiconductor Co.Ltd
http//www.hmsemi.com
Page 2

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डाउनलोड[ HM6400 Datasheet.PDF ]


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