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HM6602 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N & P-Channel Enhancement Mode Power MOSFET - H&M Semiconductor

भाग संख्या HM6602
समारोह N & P-Channel Enhancement Mode Power MOSFET
मैन्युफैक्चरर्स H&M Semiconductor 
लोगो H&M Semiconductor लोगो 
पूर्व दर्शन
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<?=HM6602?> डेटा पत्रक पीडीएफ

HM6602 pdf
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note2)
HM6602
N-Ch
1.0
RθJA
/W
P-Ch
104
N-CHElectrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS VDS=30V,VGS=0V
Gate-Body Leakage Current
IGSS VGS20V,VDS=0V
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
VGS(th)
RDS(ON)
VDS=VGS,ID=250μA
VGS=4.5V, ID=3.1A
VGS=10V, ID=3.6A
Forward Transconductance
gFS VDS=5V,ID=2.9A
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
Crss
VDS=15V,VGS=0V,
F=1.0MHz
Switching Characteristics (Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
tr
td(off)
tf
VDD=15V,ID=2.9A
VGS=10V,RGEN=3
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS=15V,ID=3.6A,
VGS=4.5V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
VSD VGS=0V,IS=2.9A
IS
Min
30
-
-
1.2
-
-
10
-
-
-
-
-
-
-
-
-
-
-
-
Typ
33
-
-
1.5
58
40
-
623
99
77
3.3
4.8
26
4
9.5
1.5
3
0.75
-
Max
-
1
±100
2.2
73
58
-
-
-
-
-
-
-
-
-
-
-
1.2
2.9
Unit
V
μA
nA
V
m
m
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
A
Page 2
v1.0

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डाउनलोड[ HM6602 Datasheet.PDF ]


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