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HM6803 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Dual P-Channel Enhancement Mode Power MOSFET - H&M Semiconductor

भाग संख्या HM6803
समारोह Dual P-Channel Enhancement Mode Power MOSFET
मैन्युफैक्चरर्स H&M Semiconductor 
लोगो H&M Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=HM6803?> डेटा पत्रक पीडीएफ

HM6803 pdf
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
IGSS
VGS(th)
RDS(ON)
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
gFS
Clss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
VGS=±10V,VDS=0V
VDS=VGS,ID=-250μA
VGS=-4.5V, ID=-3A
VGS=-2.5V, ID=-2A
VDS=-5V,ID=-2.8A
VDS=-10V,VGS=0V,
F=1.0MHz
VDD=-10V,ID=-1A
VGS=-4.5V,RGEN=10
VDS=-10V,ID=-3A,
VGS=-2.5V
VGS=0V,IS=1.3A
HM6803
- - ±100 nA
-0.4 -0.7
- 64
- 89
-1
110
140
V
m
m
- 9.5
-
S
- 950
- 115
- 75
-
-
-
PF
PF
PF
-7
-3
- 30
- 12
- 9.5
-2
-3
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
- - -1.2 V
Shenzhen H&M Semiconductor Co.Ltd
http//www.hmsemi.com
Page 2
v1.1

विन्यास 7 पेज
डाउनलोड[ HM6803 Datasheet.PDF ]


शेयर लिंक


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