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HM6801 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Dual P-Channel Enhancement Mode Power MOSFET - H&M Semiconductor

भाग संख्या HM6801
समारोह Dual P-Channel Enhancement Mode Power MOSFET
मैन्युफैक्चरर्स H&M Semiconductor 
लोगो H&M Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=HM6801?> डेटा पत्रक पीडीएफ

HM6801 pdf
HM6801
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
IGSS
VGS(th)
RDS(ON)
VGS=±20V,VDS=0V
VDS=VGS,ID=-250μA
VGS=-10V, ID=-2.5A
VGS=-4.5V, ID=-1.5A
- - ±100 nA
-1 -1.6 -2.5
- 72 130
- 110 180
V
m
m
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
gFS
Clss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
VDS=-10V,ID=-2A
-2
-
VDS=-15V,VGS=0V,
F=1.0MHz
- 950
- 115
- 75
-
-
-
VDD=-15V,RL=15
VGS=-10V,RGEN=6
VDS=-15V,ID=-2.0A,VGS=-10V
-
-
-
-
-
-
-
7
3
30
12
9.5
2
3
-
-
-
-
-
-
-
VGS=0V,IS=-2.5A
- - -1.2
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
Shenzhen H&M Semiconductor Co.Ltd
http//www.hmsemi.com
Page 2
v1.1

विन्यास 7 पेज
डाउनलोड[ HM6801 Datasheet.PDF ]


शेयर लिंक


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