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HM6401 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-Channel Enhancement Mode Power MOSFET - H&M Semiconductor

भाग संख्या HM6401
समारोह P-Channel Enhancement Mode Power MOSFET
मैन्युफैक्चरर्स H&M Semiconductor 
लोगो H&M Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=HM6401?> डेटा पत्रक पीडीएफ

HM6401 pdf
HM6401
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
IGSS
VGS=±20V,VDS=0V
- - ±100 nA
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=-250μA
VGS=-10V, ID=-4.2A
VGS=-4.5V, ID=-4A
VGS=-2.5V, ID=-1A
VDS=-5V,ID=-4.2A
-0.7 -1
- 50
- 64
95
- 10
-1.3
55
72
120
-
V
m
m
m
S
Clss
Coss
VDS=-15V,VGS=0V,
F=1.0MHz
- 950
- 115
-
-
PF
PF
Crss
- 75
-
PF
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=-15V,ID=-3.2A
VGS=-10V,RGEN=6
VDS=-15V,ID=-4A,VGS=-4.5V
-
-
-
-
-
-
-
7
3
30
12
9.5
2
3
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
VSD
VGS=0V,IS=-1A
- - -1.2 V
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
Shenzhen H&M Semiconductor Co.Ltd
http//www.hmsemi.com
Page 2
v1.1

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डाउनलोड[ HM6401 Datasheet.PDF ]


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