TEMIC
IRFD9120/9123
=Specifications (TJ 25°C Unless Otherwise Noted)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
V(BR)DSS
VGS(tb)
IGSS
loss
IO(an)
Drain-Source On-State Resistanceb
roS(on)
Forward 1tansconductanceb
gr,
VGs=OY,Io= -2501lA
IRFD9120
IRFD9123
Vos = VGs. 10 = -250 IlA
VOS = OY,VGS = ±20V
VOS = V(BR)DSS. VGS = 0 V
Vos = 0.8XV(BR)DSS. VGS - OY,TJ -125'C
Vos = -lOY, VGS = -lOY
IRFD9120
IRFD9123
VGS = -lOY, 10 = -0.8 A
IRFD9120
IRFD9123
VGS = -lOY, 10 = -0.8 A,
TJ = 125'C
IRFD9120
IRFD9123
Vos = -15 Y, 10 = -0.8 A
Dynamic
Input Capacitance
C;..
Output Capacitance
Reverse 1tansfer Capacitance
Thtal Gate ChargeC
Co..
c,."
Og
VGS = OY, Vos = -25Y,f= 1 MHz
Gate-Source ChargeC
Ogs VOS = -50~VGS = lOY, 10 = -4A
Gate-Drain ChargeC
111m-On Delay 11meC
Rise Timec
111m-Off Delay 11meC
Fall11mec
Ogd
td(an)
t,
td(off)
tf
Vnn = -50 V. RL = 620
10"" -O.SA, VGEN = -10Y,Ro = 250
Source-Drain Diode Ratings and Characteristics (TA = 2S"C)
Continuous Current
Is
Pulsed Current
. ISM
Forward Voltageb
VSO
Reverse Recovery 11me
Reverse Recovery Charge
trr
Orr
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width s 300 J.IS. duty cycle s 2%.
c. Independent of operating temperature.
IF = Is. VGS=OV
IRFD9120
IRFD9123
IRFD9120
IRFD9123
IRFD9120
IRFD9123
IF = Is. dlF/dt = 100 NJ.IS
Min
-100
-60
-2.0
-1.0
-0.8
0.8
Siliconix
'JYpa Max Unit
-4.0
±500
-250
-1000
V
nA
IlA
A
0.50 0.60
0.60 0.80
0
0.80 1.0
1.00 1.4
1.0 S
350 450
205 350 pF
80 100
9 20
1.S nC
5.6
9 50
25 100 ...
30 100
30 100
-1.0
-0.8
A
-S.O
-6.4
-6.3
V
-6.0
SO ns
0.18 !,C
6-50
P-36S52-Rev. D (06/06/94)
