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VS-STPS1045B-M3 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - High Performance Schottky Rectifier - Vishay

भाग संख्या VS-STPS1045B-M3
समारोह High Performance Schottky Rectifier
मैन्युफैक्चरर्स Vishay 
लोगो Vishay लोगो 
पूर्व दर्शन
1 Page
		
<?=VS-STPS1045B-M3?> डेटा पत्रक पीडीएफ

VS-STPS1045B-M3 pdf
www.vishay.com
VS-STPS1045B-M3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
See fig. 1
VFM (1)
Maximum reverse leakage current
See fig. 2
Typical junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
IRM (1)
CT
LS
dV/dt
TEST CONDITIONS
VALUES
10 A
20 A
TJ = 25 °C
0.63
0.84
10 A
20 A
TJ = 125 °C
0.57
0.72
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
0.2
15
760
5.0
Rated VR
10 000
UNITS
V
mA
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
TJ (1), TStg
RthJC
DC operation
See fig. 4
Maximum thermal resistance,
junction to ambient
RthJA
Approximate weight
Marking device
Case style D-PAK (similar to TO-252AA)
Note
(1) d--d--P--T---t-Jo---t < -R----t-1-h---J--A-- thermal runaway condition for a diode on its own heatsink
VALUES
-40 to +175
UNITS
°C
3.0
°C/W
50
0.3 g
0.01 oz.
STPS1045B
Revision: 24-Nov-16
2 Document Number: 93327
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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