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AOSP66406 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 40V N-Channel AlphaSGT - Alpha & Omega Semiconductors

भाग संख्या AOSP66406
समारोह 40V N-Channel AlphaSGT
मैन्युफैक्चरर्स Alpha & Omega Semiconductors 
लोगो Alpha & Omega Semiconductors लोगो 
पूर्व दर्शन
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<?=AOSP66406?> डेटा पत्रक पीडीएफ

AOSP66406 pdf
AOSP66406
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=40V, VGS=0V
IGSS
VGS(th)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
VDS=0V, VGS=±20V
VDS=VGS, ID=250µA
VGS=10V, ID=17A
Forward Transconductance
Diode Forward Voltage
VGS=4.5V, ID=14A
VDS=5V, ID=17A
IS=1A, VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=20V, f=1MHz
f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
Qoss
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=20V, ID=17A
Gate Drain Charge
Output Charge
Turn-On DelayTime
VGS=0V, VDS=20V
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=20V, RL=1.18,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=17A, di/dt=500A/µs
Body Diode Reverse Recovery Charge IF=17A, di/dt=500A/µs
Min
40
1.5
0.9
Typ
2.0
5.5
8.2
7.9
70
0.7
1480
245
13
1.8
20
8.5
5.5
3
10
7.5
2
23
3
11
21
Max Units
1
5
±100
2.5
6.6
9.8
10
1
4
V
µA
nA
V
mΩ
mΩ
S
V
A
pF
pF
pF
2.7 Ω
30 nC
14 nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: October 2017
www.aosmd.com
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Alpha & Omega Semiconductors


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