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LBSS138DW1T1G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - LRC

भाग संख्या LBSS138DW1T1G
समारोह Power MOSFET
मैन्युफैक्चरर्स LRC 
लोगो LRC लोगो 
पूर्व दर्शन
1 Page
		
<?=LBSS138DW1T1G?> डेटा पत्रक पीडीएफ

LBSS138DW1T1G pdf
LBSS138DW1T1G, S-LBSS138DW1T1G
Power MOSFET
5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC)
OFF CHARACTERISTICS
Characteristic
Drain–Source Breakdown Voltage
(VGS = 0, ID = 250μAdc)
Zero Gate Voltage Drain Current
(VGS = 0, VDS = 25 Vdc)
(VGS = 0, VDS = 50 Vdc)
Gate–Body Leakage Current, Forward
(VGS = 20 Vdc)
Gate–Body Leakage Current, Reverse
(VGS = - 20 Vdc)
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
(VDS = VGS, ID = 1.0mAdc)
Static Drain–Source On–State Resistance
(VGS = 2.75 Vdc, ID < 200 mAdc,
TA = –40°C to +85°C)
Symbol
VBRDSS
IDSS
IGSSF
IGSSR
Min.
50
-
-
-
-
Typ. Max.
--
- 0.1
- 0.5
- 0.1
- -0.1
Unit
Vdc
μAdc
μAdc
μAdc
VGS(th)
RDS(on)
0.5
-
Vdc
- 1.5
Ohms
5.6 10
(VGS = 5.0 Vdc, ID = 200 mAdc)
Forward Transconductance
(VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz)
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
- - 3.5
gfs
100 -
-
Ciss
- 40 50
mS
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Coss
Ciss
-
-
12 25
3.5 5.0
pF
pF
ns
Turn-On Delay Time
(VDD = 30 Vdc , ID =200
mAdc)
td(on)
-
- 20
Turn-Off Delay Time
td(off)
2.Pulse Test: Pulse Width 300 μs, Duty Cycle 2.0%.
-
- 20
Leshan Radio Company, LTD.
Rev.B Mar 2016
2/6

विन्यास 6 पेज
डाउनलोड[ LBSS138DW1T1G Datasheet.PDF ]


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