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LBSS84DW1T1G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - LRC

भाग संख्या LBSS84DW1T1G
समारोह Power MOSFET
मैन्युफैक्चरर्स LRC 
लोगो LRC लोगो 
पूर्व दर्शन
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<?=LBSS84DW1T1G?> डेटा पत्रक पीडीएफ

LBSS84DW1T1G pdf
LESHAN RADIO COMPANY, LTD.
LBSS84DW1T1G , S-LBSS84DW1T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Zero Gate Voltage Drain Current
(VDS = 25 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 1.)
Gate–Source Threaded Voltage
(VDS = VGS, ID = 250µ Adc)
Static Drain–to–Source On–Resistance
(VGS = 5.0 Vdc, ID = 100 mAdc)
V(BR)DSS
IDSS
IGSS
VGS(th)
rDS(on)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 5.0 Vdc)
(VDS = 5.0 Vdc)
(VDG = 5.0 Vdc)
Ciss
Coss
Crss
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
(VDD = –15 Vdc, ID = –2.5 Adc,
RL = 50 )
Fall Time
Gate Charge
td(on)
tr
td(off)
tf
QT
1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
2. Switching characteristics are independent of operating junction temperature.
Min
50
0.8
Typ Max Unit
– – Vdc
µAdc
– 0.1
– 15
– 60
±100
nAdc
– 2.0 Vdc
5.0 10 Ohms
42
20
4
13
6
16
3
6000
pF
ns
pC
Rev .A 2/5

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डाउनलोड[ LBSS84DW1T1G Datasheet.PDF ]


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LBSS84DW1T1GPower MOSFETLRC
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