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LBSS139LT1G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - LRC

भाग संख्या LBSS139LT1G
समारोह Power MOSFET
मैन्युफैक्चरर्स LRC 
लोगो LRC लोगो 
पूर्व दर्शन
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<?=LBSS139LT1G?> डेटा पत्रक पीडीएफ

LBSS139LT1G pdf
LBSS139LT1G, S-LBSS139LT1G
Power MOSFET
5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC)
OFF CHARACTERISTICS
Characteristic
Drain–Source Breakdown Voltage
(VGS = 0, ID = 250μAdc)
Zero Gate Voltage Drain Current
Symbol
VBRDSS
Min.
50
Typ. Max.
--
Unit
Vdc
μAdc
(VGS = 0, VDS = 25 Vdc)
IDSS
-
- 0.1
(VGS = 0, VDS = 50 Vdc)
Gate–Body Leakage Current, Forward
(VGS = 20 Vdc)
Gate–Body Leakage Current, Reverse
(VGS = - 20 Vdc)
IGSSF
IGSSR
-
-
-
- 0.5
μAdc
- 10.0
μAdc
- -10
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
(VDS = VGS, ID = 1.0mAdc)
Static Drain–Source On–State Resistance
VGS(th)
RDS(on)
0.5
Vdc
- 1.5
Ohms
(VGS = 2.75 Vdc, ID < 200 mAdc,
TA = –40°C to +85°C)
- 5.6 10
(VGS = 5.0 Vdc, ID = 200 mAdc)
- - 3.5
Forward Transconductance
(VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz)
gfs
100 -
mS
-
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
- 22.8 -
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Coss
- 3.5 -
pF
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Crss
- 2.9 -
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
(VDD = 30 Vdc , VGEN =
10 V,RG =25Ω ,RL =60
td(on)
-
3.8
-
Ω,ID =500 mAdc)
Turn-Off Delay Time
td(off)
-
19
-
2.Pulse Test: Pulse Width 300 μs, Duty Cycle 2.0%.
ns
Leshan Radio Company, LTD.
Rev.C Jan 2016
2/7

विन्यास 7 पेज
डाउनलोड[ LBSS139LT1G Datasheet.PDF ]


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