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IRFI4410ZPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - Infineon

भाग संख्या IRFI4410ZPBF
समारोह Power MOSFET
मैन्युफैक्चरर्स Infineon 
लोगो Infineon लोगो 
पूर्व दर्शन
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IRFI4410ZPBF pdf
  IRFI4410ZPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ.
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
IDSS
IGSS  
RG
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
100 –––
––– 95
––– 7.9
2.0 –––
––– –––
––– –––
––– –––
––– –––
––– 0.9
Max.
–––
–––
9.3
4.0
20
250
100
-100
–––
Units
Conditions
V VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 5mA
m VGS = 10V, ID = 26A
V VDS = VGS, ID = 150µA
µA
VDS = 100 V, VGS = 0V
VDS = 100V,VGS = 0V,TJ =125°C
nA  
VGS = 20V
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs Forward Trans conductance
80 ––– ––– S VDS = 50V, ID = 26A
Qg Total Gate Charge
––– 81 110  
ID = 26A
Qgs Gate-to-Source Charge
––– 18 ––– nC   VDS = 50V
Qgd Gate-to-Drain Charge
––– 23 –––  
VGS = 10V
td(on) Turn-On Delay Time
––– 15 –––
VDD = 65V
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
–––
–––
27
43
–––
–––
ns
ID = 26A
RG= 2.7
––– 30 –––
VGS = 10V
Ciss Input Capacitance
––– 4910 –––
VGS = 0V
Coss Output Capacitance
––– 330 –––
VDS = 50V
Crss Reverse Transfer Capacitance
––– 150 ––– pF   ƒ = 1.0MHz
Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 420 –––
VGS=0V,VDS= 0V to 80V See Fig. 11
Coss eff. (TR) Effective Output Capacitance (Time Related) ––– 680 –––
VGS = 0V, VDS = 0V to 80V
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
Min.
–––
–––
Typ.
–––
–––
Max. Units
Conditions
43
170
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
––– ––– 1.3 V TJ = 25°C,IS = 26A,VGS = 0V 
––– 47 71 ns TJ = 25°C
––– 54
––– 110
––– 140
81
160
210
nC
TJ = 125°C
TJ = 25°C
TJ = 125°C
VR = 85V
IF = 26A
di/dt= 100A/µs
––– 2.5 ––– A  TJ = 25°C  
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Limited by TJmax, starting TJ = 25°C, L = 0.91mH, RG = 25, IAS = 26A, VGS =10V. Part not recommended for use above this value.
Pulse width 400µs; duty cycle 2%.
Ris measured at TJ approximately 90°C.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
2 2017-04-27

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