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IRFI4227PBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - Infineon

भाग संख्या IRFI4227PBF
समारोह Power MOSFET
मैन्युफैक्चरर्स Infineon 
लोगो Infineon लोगो 
पूर्व दर्शन
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<?=IRFI4227PBF?> डेटा पत्रक पीडीएफ

IRFI4227PBF pdf
  IRFI4227PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ.
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
VGS(th)/TJ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Temp. Coefficient
IDSS Drain-to-Source Leakage Current
IGSS  
gfs
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Trans conductance
200
–––
–––
3.0
–––
–––
–––
–––
–––
47
–––
240
21
–––
-11
–––
–––
–––
–––
–––
Qg Total Gate Charge
Qgd Gate-to-Drain Charge
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
tst Shoot Through Blocking Time
––– 73
––– 21
––– 17
––– 19
––– 11
––– 29
100 –––
EPULSE
Energy per Pulse
––– 570
––– 910
Ciss
Coss
Crss
Coss eff.
LD
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Internal Drain Inductance
––– 4600
––– 460
––– 91
––– 360
––– 4.5
LS Internal Source Inductance
Avalanche Characteristics 
Parameter
EAS Single Pulse Avalanche Energy 
EAR Repetitive Avalanche Energy
VDS(Avalanche)
Repetitive Avalanche Voltage
IAS Avalanche Current
––– 7.5
Max.
–––
–––
25
5.0
–––
20
1.0
100
-100
–––
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
m VGS = 10V, ID = 17A
V
mV/°C
VDS
=
VGS,
ID
=
250µA
µA VDS = 200V, VGS = 0V
mA  VDS = 200V,VGS = 0V,TJ =150°C
nA  
VGS = 20V
VGS = -20V
S VDS = 25V, ID = 17A
nC
 
ID = 17A,VDS = 100V
VGS = 10V
VDD = 100V, VGS = 10V
ns ID = 17A
RG= 2.5
See Fig. 22
ns VDD = 160V,VGS = 15V,RG= 4.7
L = 220nH, C = 0.4µF, VGS = 15V
µJ
VDD = 160V, RG= 4.7TJ = 25°C
L = 220nH, C = 0.4µF, VGS = 15V
VDD = 160V, RG= 4.7TJ = 100°C
VGS = 0V
pF
 
VDS
ƒ=
= 25V
1.0MHz
VGS = 0V, VDS = 20V to 160V
Between lead,
nH  6frmommp(0ac.2k5aigne.)
and center of die contact
Typ.
–––
–––
240
–––
Max.
54
4.6
–––
16
Units
mJ
V
A
Diode Characteristics
Parameter
IS
@ TC = 25°C
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
93
350
Max. Units
Conditions
26
100
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
1.3 V TJ = 25°C,IS = 17A,VGS = 0V 
140 ns TJ = 25°C ,IF = 17A, VDD = 50V
520 nC di/dt = 100A/µs 
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
starting TJ = 25°C, L = 0.44mH, RG = 25, IAS = 16A.
Pulse width 400µs; duty cycle 2%.
Rθ is measured at TJ of approximately 90°C.
Half sine wave with duty cycle = 0.25, ton=1μsec.
2 2017-04-27

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