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D1085 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon NPN Triple Transistor - Hitachi

भाग संख्या D1085
समारोह Silicon NPN Triple Transistor
मैन्युफैक्चरर्स Hitachi 
लोगो Hitachi लोगो 
पूर्व दर्शन
1 Page
		
<?=D1085?> डेटा पत्रक पीडीएफ

D1085 pdf
2SD1085(K)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to base breakdown V(BR)CBO
voltage
300
Collector to emitter sustain
voltage
VCEO(sus)
300
Emitter to base breakdown
voltage
V(BR)EBO
7
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
ICEO
hFE
VCE(sat)
500
Base to emitter saturation
voltage
VBE(sat)
Turn on time
Turn off time
Note: 1. Pulse test.
ton
toff
Typ
1.0
22
Max Unit
500 V
—V
—V
100 µA
1.5 V
2.0 V
— µs
— µs
Test conditions
IC = 0.1 mA, IE = 0
IC = 2 A, PW = 50 µs,
f = 50 Hz, L = 10 mH
IE = 50 mA, IC = 0
VCE = 300 V, RBE =
VCE = 2 V, IC = 2 A*1
IC = 2 A, IB = 20 mA*1
IC = 2 A, IB1 = –IB2 = 20 mA
Maximum Collector Dissipation Curve
60
40
20
0 50 100 150
Case Temperature TC (°C)
Area of Safe Operation
10
3 iC (peak)
IC max.
1.0
0.3
Ta = 25°C
0.1
0.03
0.01
0.003
0.001
0.5 1.0 2 5 10 20 50 100 200 500
Collector to Emitter Voltage VCE (V)
2

विन्यास 4 पेज
डाउनलोड[ D1085 Datasheet.PDF ]


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