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IDT8M856L डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 256K CMOS Static RAM Module - IDT

भाग संख्या IDT8M856L
समारोह 256K CMOS Static RAM Module
मैन्युफैक्चरर्स IDT 
लोगो IDT लोगो 
पूर्व दर्शन
1 Page
		
<?=IDT8M856L?> डेटा पत्रक पीडीएफ

IDT8M856L pdf
IDT8M856L 256K (32K x 8-BIT)
CMOS STATIC RAM MODULE (Low-Power Version)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
ABSOLUTE MAXIMUM RATING(1)
SYMBOL
RATING
COMMERCIAL MILITARY UNIT
VTEAM
Terminal Voltage
with Respect
toGND
-0.5 to +7.0 -0.5 to +7.0 V
Operating
TA Temperature
oto +70
-55 to +125 °C
TBIAS
Temperature
Under Bias
-10 to +85 -65 to +135 °C
TSTG
Storage
Temperature
-55 to +125 -65 to +150 °C
PT Power Dissipation
4.0
4.0 W
lOUT
DC Output Current
50
50 mA
NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
-
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
MIN.
Vee Supply Voltage
4.5
GND
Supply Voltage
0
V,H
Input High Voltage
2.2
V,L
Input low Voltage
-0.5(1)
NOTE:
1. V1l min =-3.0V pulse width less than 20n8.
TYR
5.0
0
-
-
MAX.
5.5
0
6.0
0.8
UNIT
V
V
V
V
DC ELECTRICAL CHARACTERISTICS (Vcc = 5V ± 10%, TA = -55°C to +125°C and O°C to +70°C)
SYMBOL
Ilul
IILol
leel
lee2
ISB
PARAMETER
Input Leakage Current
Output Leakage Current
Operating Power Supply Current
Dynamic Operating Current
Standby Power Supply Current
TEST CONDITIONS
Vee = 5.5V, Y'N = OV to Vee
=Vee = 5.5V, CS = V,H, VOUT OV to Vee
= =Vee 5.5V, CS V,c. Output Open, I = 0
= =Vee 5.5V. CS = V,c. Output Open, I I Max.
CS" V,H (TTL Level), Vee = 5.5V. Output Open
MIN. TYR(l)
--
--
- 80
- 80
-8
ISBl
Full Standby Power Supply Current
CS" Vee - 0.2V (CMOS Level)
Y,N " Vee - 0.2V or :5 0.2V
VOL Output Low Voltage
=10L 10mA. Vee = 4.5V
10L =8mA. Vce =4.5V
VOH Output High Voltage
10H = -4mA. Vee = 4.5V
- 0.1
--
--
2.4 -
NOTES:
1. Vee = 5V. TA = +25°C
2. ISB1 at commercial temperature = 5mA.
MAX.
15
15
160
160
15
12.0(2)
0.5
0.4
-
UNIT
p.A
"A
mA
mA
mA
mA
V
V
DATA RETENTION CHARACTERISTICS (TA = -55°C to +125°C and DOC to +70°C)
SYMBOL
PARAMETER
VDA Vee lor Retention Data
leeDA
Data Retention Current
tCDA
Chip Deselect to Data Retention Time
tA Operation Recovery Time
NOTES:
1. TA =25'C
2. at Vee =2V
3. at Vee =3V
=4. t AC Read Cycle Time
TEST CONDITIONS
CS " Vee - 0.2V
V,N :5 Vee - 0.2V or " 0.2V
MIN.
2.0
-
-
0
t Ae(4)
TYP.I' )
-
6.0(2)
12.0(3)
-
-
LOW Vee DATA RETENTION WAVEFORM
DATA RETENTION
MODE
Vee - - - - - - - - : L . 4 . 5 V VDA" 2V 4.5V
COM'L
MAX.
-
1000(2)
1500(3)
-
-
MIL
MAX.
-
4000(2)
6000(3)
-
-
UNIT
V
"A
ns
ns
7-78
SSD8M856-003

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