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IDT8M628S डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - CMOS Static RAM Module - IDT

भाग संख्या IDT8M628S
समारोह CMOS Static RAM Module
मैन्युफैक्चरर्स IDT 
लोगो IDT लोगो 
पूर्व दर्शन
1 Page
		
<?=IDT8M628S?> डेटा पत्रक पीडीएफ

IDT8M628S pdf
IDTBM656S/IDT8M628S
CMOS STATIC RAM MODULE 256K (16K x 16-BIT) & 128K (8K x 16-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGE
PIN CONFIGURATION
Ve~
~(')
CS WE
I/O,.
UB
liD,.
[]j
liD,.
NC
A,.liD,.
liD,.
A,.(')
A,.liD"
liD,.
A"
liD.
GND(')
A.
GND(')
liD. A.
1/07 A7
liD. A.
liD. A.
liD. A.
liD. A.
liD. A.
I/~
A,
AuDE -"""-_ _..:.;.JC"""
DIP
TOP VIEW
SRDBM656-o02
PIN NAMES
A._'3
1/0,_'6
CS
Vee
WE
OE
GND
UB
LB
Addresses
Data InpuVOutput
Chip Select
Power
Write Enable
Output Enable
Ground
Upper Byte Control
Lower Byte Control
NOTES:
1. Both Vee pins need to be connected to the 5V supply, and both GND pins need
to be grounded for proper operation.
2. On IDT8M628, 128K (8K x 16-Bit) option, A13 (Pin 35) is required external
grounding for proper operation.
ABSOLUTE MAXIMUM RATINGS(1)
SYMBOL
RATING
VALUE
UNIT
VTERM
Terminal Voltage with
Respect to GND
-0.5 to +7.0
V
TA
Operating Temperature
-55 to +125
'C
TBIAS
Temperature Under Bias
-65 to +135
'C
TSTG
Storage Temperature
-65 to +155
'C
PT Power Dissipation
4.0 W
lOUT
DC Output Current
50 mA
NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
SYMBOL
PARAMETER
MIN. TYP.
Vee Supply Voltage
4.5 5.0
GND
V,H
V,L
Supply Voltage
Input High Voltage
Input Low Voltage
0
2.2
-0.5(1)
0
-
-
NOTE:
1. V1L (min) =-3.0V for pulse width less than 20ns.
MAX.
5.5
0
6.0
O.B
UNIT
V
V
V
V
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
GRADE
Military
Commercial
AMBIENT
TEMPERATURE
-55'C to +125'C
O'C to +70'C
GND
OV
OV
Vee
5.0V ± 10%
5.0V ± 10%
DC ELECTRICAL CHARACTERISTICS
Vee = 5.0V ± 10%, Vee (Min.) = 4.5V, Vee (Max.) = 5.5V, VLe = 0.2V, VHe = Vee = -0.2V
SYMBOL
PARAMETER
!lui Input Leakage Current
!lLOI Output Leakage Current
leex16 Operating Current in X16 Mode
leexB Operating Current in XB Mode
TEST CONDITIONS
Vee =Max.; V,N =GND to Vee
Vee =Max.
CS =V,H, VOUT = GND to Vee
CS, UB & LB =V,L
Vee =Max., Output Open
f =f Max.
CS =V,L, UB or LB =V,L
Vee = Max., Output Open
f =f Max.
IDTBM656S
MIN. TYP. MAX.
- - 15
- - 15
- 165 330
- 100 200
ISB &
ISB'
Standby Power Supply Current
CS":V,Hor
UB ": V,H and LB ": V,H
Vee =Max.
Output Open
VOL Output Low Voltage
VOH Output High Voltage
10L =BmA, Vee =Min.
10H = -4mA, Vee =Min.
NOTE:
1. Vce = 5V, TA = +25°e
2. Isa and IS81 of IDT8MB56/IDT8MB28 at commercial temperature = BOmA/30mA.
- 4 BO(2)
--
2.4 -
0.4
-
IDTBM628S
MIN. TYP. MAX.
- - 15
- - 15
- 150 300
- BO 170
- 2 40(2)
--
2.4 -
0.4
-
UNIT
I'A
I'A
mA
rnA
mA
V
V
fI
7-69

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डाउनलोड[ IDT8M628S Datasheet.PDF ]


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