DataSheet.in

IDT7M656L डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 256K CMOS Static RAM Module - IDT

भाग संख्या IDT7M656L
समारोह 256K CMOS Static RAM Module
मैन्युफैक्चरर्स IDT 
लोगो IDT लोगो 
पूर्व दर्शन
1 Page
		
<?=IDT7M656L?> डेटा पत्रक पीडीएफ

IDT7M656L pdf
IDT7M858L 258K CMOS STATIC RAM MODULE
MILITARY AND COMMERCIAL TEMPERATURE RANGES
ABSOLUTE MAXIMUM RATING(1)
SYMBOL
RATING
COMMERCIAL MILITARY UNIT
VTERM
Terminal Voltage
with Respect
toGND
-0.5 to +7.0 -0.5 to +7.0 V
Operating
TA Temperature
oto +70
-55 to +125 ·C
TBIAS
Temperature
Under Bias
-10 to +85 -65 to +135 ·C
TSTG
Storage
Temperature
-55 to +125 -65 to +150 ·C
PT Power Dissipation
8.0
8.0 W
lOUT
DC Output Current
50
50 mA
NOTE:
1. Slresses greaterthan thoselistect under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This Is a stress rating only and func-
tional operation 01 the deylce at these or any other conditions above those
Indicated in the operational sections of this Specilication Is nol implied. Expo-
,sure to absolute maximum reting conditions for extended periods may affect
reliability.
RECOMMENDED DC OPERATING
CONDITIONS
(TA = -55°C to +125°C and O°C to +70°C)
SYMBOL
PARAMETER
MIN.
Vee Supply Voltage
4.5
GND Supply Voltage
0
VIH Input High Voltage 2.2
VIL Input Low Voltage -0.5 (1 )
NOTE:
1. V1L min = -1.0V for pulse width less than 20ns.
TYP.
5.0
0
-
-
MAX.
5.5
0
6.0
0.8
UNIT
V
V
V
V
DC ELECTRICAL CHARACTERISTICS ±(Vcc = +5.0V 10%, TA = -55°C to +125°C and O°C to +70°C)
SYMBOL
PARAMETER
lIu l Input Leakage Current
IILOI Output Leakage Current
leex16 Operating Current in X16 mode
leex6
leex4
ISB
ISBI
Operating Current in X8 mode
Operating Current in X4 mode
Standby Power Suppiy Current
Full Standby Power Supply
Current
VOL Output Low Voltage
VOH Output High Voltage
NOTES
1. Vce =SV. TA =+2SoC
2. ISB1 max. at commercial temperature = 5.0mA
TEST CONDITIONS
Vee =5.5V, VIN=OVtoVee
CS = VIH, VOUT = OV to Vee
CS xx = VIL' Output Open, Vee = 5.5V, f = f Max.
CSxx = VIL, Output Open, Vee = 5.5V, f = f Max.
CS xx = VIL' Output Open, Vee = 5.5V, f = f Max.
CSxx 2: VIH (TTL Level), Vee = 5.5V, Output Open
CSxx 2: Vee - 0.2V (CMOS Level)
VIN 2: Vee - 0.2V or!S 0.2V
10L =8mA
10H = -4mA
IDT7M656L
MIN. TYP. MAX.
- - 20
- - 20
- 640 1260
- 420 840
- 310 620
- 200 400
- 0.032 15(2)
--
2.4 -
0.4
-
UNIT
p.A
p.A
mA
mA
mA
mA
mA
V
V
TRUTH TABLE
MODE
Standby
Read
Write
CSxx
H
L
L
WExx
X
H
L
OUTPUT
HlghZ
DOut
HighZ
POWER
Standby
Active
Active
CAPACITANCE (TA = +25°C, f = 1.0MHz)
SYMBOL
PARAMETER(I) CONDITIONS
CIN
C OUT(2)
Input CapaCitance
Output Capacitance
V'N=OV
VOUT=OV
NOTE$:
1. This parameter is sampled and not 100% tested.
2. For each output. 16K x 16 mode.
TYp.
200
60
UNIT
pF
pF
7-36
AC TEST CONDITIONS
Input Pulse Levels
Input Riseand Fal/Tlmes
Input Timing Reference Levels
Output Reference Levels
Output Load
GNDt03.0V
10ns
1.5V
1.5 V
See Figures 1and 2
~v
~v
DOUT-~---+
3OpF*
DoUT-~---+
SA07M656-003
Figure 1. Output Load
SRD7M656-004
Figure 2. Outpul Load
(for 1HZ, t LZ, twz. and tow)
°lncludlng scope and Jig.

विन्यास 6 पेज
डाउनलोड[ IDT7M656L Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IDT7M656L256K CMOS Static RAM ModuleIDT
IDT


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English