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UV1404R डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 190A 40V N-Channel MOSFET - UVSEMI

भाग संख्या UV1404R
समारोह 190A 40V N-Channel MOSFET
मैन्युफैक्चरर्स UVSEMI 
लोगो UVSEMI लोगो 
पूर्व दर्शन
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UV1404R pdf
UV1404R
190A 40V N-Channel MOSFET
Table 2. Thermal Characteristic
Parameter
Thermal ResistanceJunction-to-CaseNote2
Symbol
RthJC
Value
0.75
Unit
/W
Table 3. Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
40
V
Zero Gate Voltage Drain Current(Tc=25)
IDSS
VDS=-24V,VGS=0V
1 μA
Gate-Body Leakage Current
IDSS VGS=±25V,VDS=0V
±100 μA
On Characteristics (Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
2-
4
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=40A
3 4 mΩ
Dynamic Characteristics
Forward Transconductance
GFS
VDS=25V,ID=40A
50
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
Crss
VDS=30V,VGS=0V,
F=1.0MHz
5000
860
480
PF
PF
PF
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
VDS=30V,ID=40A,
Qgs VGS=10V
Qgd
106 nC
20 nC
35 nC
Switching times
Turn-on Delay Time
td(on)
34 50 nS
Turn-on Rise Time
tr VDD=30V,ID=1A,RL=30Ω
30 46 nS
Turn-Off Delay Time
td(off)
VGS=10V,RG= 6 Ω
124 200
nS
Turn-Off Fall Time
tf
64 116 nS
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
Forward on voltage(Note 3)
Reverse Recovery Time(Note 1)
Reverse Recovery Charge
ISD
VSD Tj=25,ISD=20A,VGS=0V
trr Tj=25,IF=40A,di/dt=100A/μs
Qrr
0.8
74
140
40
1.3
A
V
nS
nC
Forward Turn-on Time
ton Intrinsic turn-on time is negligible(turn-on is dominated by LS+LD)
Notes 3.Pulse Test: Pulse Width 300μs, Duty Cycle 2%, R G =25 Ω, Starting Tj=25
2/6

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
UV1404R190A 40V N-Channel MOSFETUVSEMI
UVSEMI


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