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AP603 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - High Dynamic Range 7W 28V HBT Amplifier - TriQuint

भाग संख्या AP603
समारोह High Dynamic Range 7W 28V HBT Amplifier
मैन्युफैक्चरर्स TriQuint 
लोगो TriQuint लोगो 
पूर्व दर्शन
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<?=AP603?> डेटा पत्रक पीडीएफ

AP603 pdf
AP603
High Dynamic Range 7W 28V HBT Amplifier
Specifications
Absolute Maximum Ratings
Parameter
Storage Temperature
RF Input Power (CW tone), Pin
Breakdown Voltage C-B, BVCBO
Breakdown Voltage C-E, BVCEO
Quiescent Bias Current, ICQ
Power Dissipation, PDISS
Rating
-55 to 150oC
Input P6dB
80 V @ 0.1 mA
51 V @ 0.1 mA
320 mA
9.5 W
Operation of this device outside the parameter ranges given
above may cause permanent damage.
Recommended Operating Conditions
Parameter
Vcc
Icq
TJ (for >106 hours MTTF)
Operational Temperature
Min
-40
Typ
+28
165
+25
Max
192
+85
Units
V
mA
oC
oC
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Electrical Specifications
Test Conditions:VCC = +28 V, VPD = 5 V, ICQ = 165 mA, T = 25C using a tuned application circuit.
Parameter
Conditions
Min
Typical
Operational Bandwidth
800
Test Frequency
2140
Power Gain
11.9
Input Return Loss
15
Output Return Loss
9.5
ACLR @ 28 dBm Output Power
See Note 1.
-50.6
IMD3 @ +30 dBm PEP
See Note 2.
-50
PIN_Vpd Current, Ipd
4
Operating Current, Icc @ 30 dBm Output Power See Note 1.
232
Collector Efficiency @ 30 dBm Output Power See Note 1.
14.5
Output P1dB
+37.6
Quiescent Current, Icq
165
Vpd +5
Vcc +28
Thermal Resistance (jnc to case) θjc
Max
2200
8.7
Units
MHz
MHz
dB
dB
dB
dBc
dBc
mA
mA
%
dBm
mA
V
V
oC/W
Notes:
1. Using W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW
2. IMD3 is measured with 1 MHz tone spacing.
3. The reference designs shown in this datasheet have the device optimized for WCDMA ACLR performance at +25C. Biasing for the
amplifier is suggested at Vcc = +28V, Vpd = +5V and Icq = 165 mA to achieve the best tradeoff in terms of efficiency and linearity.
Increasing Icq will improve upon the device linearity (IMD3 and ACLR), but will decrease the efficiency performance slightly.
Data Sheet: Rev A 07/02/11
© 2011 TriQuint Semiconductor, Inc.
- 2 of 20 -
Disclaimer: Subject to change without notice
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