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AOP605 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Complementary Enhancement Mode Field Effect Transistor - Alpha & Omega Semiconductors

भाग संख्या AOP605
समारोह Complementary Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स Alpha & Omega Semiconductors 
लोगो Alpha & Omega Semiconductors लोगो 
पूर्व दर्शन
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<?=AOP605?> डेटा पत्रक पीडीएफ

AOP605 pdf
AOP605
n-channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=24V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=7.5A
Static Drain-Source On-Resistance
Forward Transconductance
Body Diode Forward Voltage
VGS=4.5V, ID=6.0A
VDS=5V, ID=7.5A
IS=1A, VGS=0V
Maximum Body-DiodeContinuous Current
TJ=55°C
TJ=125°C
30
1
30
12
1
5
100
1.8 3
22.6 28
33
16
0.76
43
1
4
V
µA
nA
V
A
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance.
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
680 820
102
77
1.2 2
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
13.84 16.6 nC
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=4.5V, VDS=15V, ID=7.5A
6.74
1.82
8.1
nC
nC
Qgd Gate Drain Charge
3.2 nC
tD(on)
Turn-On DelayTime
4.6 ns
tr Turn-On Rise Time
VGS=10V, VDS=15V, RL=2.0, 4.1 ns
tD(off)
Turn-Off DelayTime
RGEN=6
20.6
ns
tf Turn-Off Fall Time
5.2 ns
trr Body Diode Reverse Recovery time IF=7.5A, dI/dt=100A/µs
16.5 20
ns
Qrr Body Diode Reverse Recovery charge IF=7.5A, dI/dt=100A/µs
7.8 nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev 4 : Jan 2009
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.

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