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VB30100CHM3 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Vishay

भाग संख्या VB30100CHM3
समारोह Dual High-Voltage Trench MOS Barrier Schottky Rectifier
मैन्युफैक्चरर्स Vishay 
लोगो Vishay लोगो 
पूर्व दर्शन
1 Page
		
<?=VB30100CHM3?> डेटा पत्रक पीडीएफ

VB30100CHM3 pdf
www.vishay.com
VB30100C-M3, VB30100CHM3
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage
per diode (1)
Reverse current per diode (2)
IF = 5 A
IF = 7.5 A
IF = 15 A
IF = 5 A
IF = 7.5 A
IF = 15 A
VR = 70 V
VR = 100 V
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF
IR
0.516
0.576
0.734
0.455
0.522
0.627
7.2
8.0
65
20
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
MAX.
-
-
0.80
-
-
0.68
-
-
500
35
UNIT
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance per diode
RJC
VB30100C
2.5
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-263AB
VB30100C-M3/4W
1.39
TO-263AB
TO-263AB
VB30100C-M3/8W
VB30100CHM3/I (1)
1.39
1.39
Note
(1) AEC-Q101 qualified
PACKAGE CODE
4W
8W
I
BASE QUANTITY
50/tube
800/reel
800/reel
DELIVERY MODE
Tube
Tape and reel
Tape and reel
Revision: 03-Jan-17
2 Document Number: 87984
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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