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BC640-16 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - High Current Transistors - ON Semiconductor

भाग संख्या BC640-16
समारोह High Current Transistors
मैन्युफैक्चरर्स ON Semiconductor 
लोगो ON Semiconductor लोगो 
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<?=BC640-16?> डेटा पत्रक पीडीएफ

BC640-16 pdf
BC636, BC636–16, BC638, BC640, BC640–16
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –10 mAdc, IB = 0)
BC636
BC638
BC640
V(BR)CEO
Collector–Base Breakdown Voltage
(IC = –100 µAdc, IE = 0)
BC636
BC638
BC640
V(BR)CBO
Emitter–Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = –30 Vdc, IE = 0)
(VCB = –30 Vdc, IE = 0, TA = 125°C)
ON CHARACTERISTICS (1)
ICBO
DC Current Gain
(IC = –5.0 mAdc, VCE = –2.0 Vdc)
(IC = –150 mAdc, VCE = –2.0 Vdc)
(IC = –500 mA, VCE = –2.0 V)
BC636
BC636–16
BC638
BC640
BC640–16
hFE
Collector–Emitter Saturation Voltage
(IC = –500 mAdc, IB = –50 mAdc)
VCE(sat)
Base–Emitter On Voltage
(IC = –500 mAdc, VCE = –2.0 Vdc)
VBE(on)
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = –50 mAdc, VCE = –2.0 Vdc, f = 100 MHz)
fT
Output Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Cob
Input Capacitance
(VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz)
Cib
1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
Min
–45
–60
–80
–45
–60
–80
–5.0
25
40
100
40
40
100
25
Typ
–0.25
–0.5
150
9.0
110
Max
–100
–10
250
250
160
160
250
–0.5
–1.0
Unit
Vdc
Vdc
Vdc
nAdc
µAdc
Vdc
Vdc
MHz
pF
pF
http://onsemi.com
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डाउनलोड[ BC640-16 Datasheet.PDF ]


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BC640-16High Current TransistorsON Semiconductor
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