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IXFT75N10Q डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - POWER MOSFETS - IXYS

भाग संख्या IXFT75N10Q
समारोह POWER MOSFETS
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
1 Page
		
<?=IXFT75N10Q?> डेटा पत्रक पीडीएफ

IXFT75N10Q pdf
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
VDS = 10 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
RG = 4.7 (External)
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
(TO-247)
30 45
S
3700
1300
425
pF
pF
pF
31 ns
65 ns
65 ns
28 ns
140 180
30
65
nC
nC
nC
0.42 K/W
0.25
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS VGS = 0 V
ISM Repetitive;
VSD IF = IS, VGS = 0 V,
Pulse test, t 300 µs, duty cycle d 2 %
75 A
300 A
1.5 V
trr
QRM IF = 50A,-di/dt = 100 A/µs, VR = 50 V
IRM
0.85
8
200 ns
µC
A
IXFH 75N10Q
IXFT 75N10Q
TO-247 AD Outline
123
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
Min Recommended Footprint
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025

विन्यास 2 पेज
डाउनलोड[ IXFT75N10Q Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXFT75N10QPOWER MOSFETSIXYS
IXYS


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