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Characteristics
Fast Symmetrical Gate Turn-Off Thyristor type H0500KC25#
Parameter
VTM Maximum peak on-state voltage
IL Latching current
IH Holding current
dv/dtcr Critical rate of rise of off-state voltage
IDM Peak off state current
IRM Peak reverse current
IGKM Peak negative gate leakage current
VGT Gate trigger voltage
IGT Gate trigger current
td Delay time
tgt Turn-on time
tf Fall time
tgq Turn-off time
Igq Turn-off gate current
Qgq Turn-off gate charge
ttail Tail time
tgw Gate off-time (see note 3)
RthJK Thermal resistance junction to sink
F Mounting force
Wt Weight
MIN
-
-
-
800
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
80
-
-
-
4.5
-
TYP MAX TEST CONDITIONS
2.8 3.2 IG=2A, IT=500A
5 - Tj=25°C
5 - Tj=25°C
- - VD=80%VDRM, VGR=-2V
- 30 Rated VDRM, VGR=-2V
- 60 Rated VRRM
- 200 VGR=-16V
0.9 - Tj=-40°C
0.8 - Tj=25°C
VD=25V, RL=25mΩ
0.7 - Tj=125°C
1.7 6.0 Tj=-40°C
0.6 2 Tj=25°C
0.1 0.5 Tj=125°C
VD=25V, RL=25mΩ
VD=50%VDRM, ITGQ=500A, IGM=30A, diG/dt=15A/µs
0.5 -
Tj=25°C, di/dt=300A/µs, (10%IGM to 90%VD)
2.0 3.0 Conditions as for td, (10%IGM to 10%VD)
VD=80%VDRM, ITGQ=500A, CS=1µF,
0.5 -
diGQ/dt=40A/µs, VGR=-16V, (90%ITGQ to 10%IVD)
5.0 6.0 Conditions as for tf, (10%IGQ to 10%ITGQ)
180 - Conditions as for tf
500 600 Conditions as for tf
35 50 Conditions as for tf, (10%ITGQ to ITGQ<1A)
- - Conditions as for tf
- 0.065 Double side cooled
- 0.24 Cathode side cooled
- 0.09 Anode side cooled
- 9.0 (see note 2)
120 -
UNITS
V
A
A
V/µs
mA
mA
mA
V
V
V
A
A
A
µs
µs
µs
µs
A
µC
µs
µs
K/W
K/W
K/W
kN
g
Notes:-
1) Unless otherwise indicated Tj=125oC.
2) For other clamping forces, consult factory.
3) The gate off-time is the period during which the gate circuit is
required to remain low impedance to allow for the passage
of tail current.
Data Sheet. Type H0500KC25# Issue 2
Page 2 of 15
August, 2004
