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SSFM1022 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET - Silikron

भाग संख्या SSFM1022
समारोह MOSFET
मैन्युफैक्चरर्स Silikron 
लोगो Silikron लोगो 
पूर्व दर्शन
1 Page
		
<?=SSFM1022?> डेटा पत्रक पीडीएफ

SSFM1022 pdf
                                
SSFM1022 
Electrical Characterizes @TA=25unless otherwise specified
Symbol Parameter
Min. Typ. Max Units Conditions
BVDSS
Drain-to-Source breakdown
voltage
100
—V
VGS = 0V,
ID = 250μA
RDS(on) Static Drain-to-Source
on-resistance
— 19
VGS = 10V,
22 m
ID = 8A
VGS(th) Gate threshold voltage
2—4 V
VDS = VGS,
ID = 250μA
IDSS
Drain-to-Source leakage current
10
VDS = 100V,
VGS = 0V
μA VDS = 100V,
——
50
VGS = 0V,
TJ = 55°C
IGSS
Gate-to-Source forward leakage —   
Gate-to-Source reverse leakage -100 — 
100
nA
VGS =25V
VGS = -25V
Qg Total gate charge
  26.4 35
Qgs Gate-to-Source charge
  9.18 15  nC
VGS=10V,
Qgd Gate-to-Drain("Miller") charge —  6.91 10 
VDS=50V,
Qg(th) Gate charge at shreshold
— 5.78 8
ID=8A
Vplateau gate plateau voltage
— 5.48 8
V
td(on)
Turn-on delay time
  10.6 — 
VGS=10V,
tr
td(off)
Rise time
Turn-Off delay time
  3.8 —  ns
  16
 
VDS=50V,
RL=6,
tf Fall time
  6
 
RGEN=3
Ciss Input capacitance
  1596 — 
VGS=0V,
Coss
Output capacitance
  249 —  pF
VDS=50V,
Crss
Reverse transfer capacitance
  77
 
f=1MHz
Rg Gate resistance
6
Ω
VGS=0V, VDS=0V,
f=1MHz
Source-Drain Ratings and Characteristics
Parameter
Symbol
IS
VSD
trr
Qrr
ton
Maximum Body-Diode
Continuous Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-on Time
  
Min. Typ. Max
Uni
Conditions
ts
40 A
— 0.65 1
V IS=1A, VGS=0V
— 32 —
— 48 —
ns
IF=8A, dI/dt=100A/μs
nC
Intrinsic turn-on time is negligible
(turn-on is dominated by LS+LD)
©Silikron Semiconductor CO.,LTD.
 
2010.12.14 Version : 1.0 preliminary page 2of9
www.silikron.com 

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डाउनलोड[ SSFM1022 Datasheet.PDF ]


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