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SSFM2506 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET - Silikron

भाग संख्या SSFM2506
समारोह MOSFET
मैन्युफैक्चरर्स Silikron 
लोगो Silikron लोगो 
पूर्व दर्शन
1 Page
		
<?=SSFM2506?> डेटा पत्रक पीडीएफ

SSFM2506 pdf
SSFM2506
Thermal Resistance
Symbol
RθJC
RθJA
Characterizes
Junction-to-case
Junction-to-ambient (t ≤ 10s)
Junction-to-Ambient (PCB mounted, steady-state)
Electrical Characterizes @TA=25unless otherwise specified
Symbol
BVDSS
Parameter
Drain-to-Source breakdown
voltage
Min.
25
Typ.
Max.
Units
V
RDS(on)
Static Drain-to-Source
on-resistance
4.1
6
6.5
VGS(th) Gate threshold voltage
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-to-Source leakage
current
Gate-to-Source forward
leakage
Gate-to-Source reverse
leakage
Total gate charge
Gate-to-Source charge
Gate-to-Drain("Miller")
charge
Turn-on delay time
Rise time
Turn-Off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer
capacitance
Gate resistance
1.2 1.9 2.5
1.2
— — 10
— — 50
— — 100
-100
35.8
3.8
13.1
10.5
65.7
27.0
8.2
1732
512
323
40
6
15
1.4
V
μA
nA
nC
ns
pF
Ω
Value
2.5
13
36
Unit
/W
/W
/W
Conditions
VGS = 0V, ID = 250μA
VGS=10V
ID = 30A
TJ = 125
VDS = VGS,
ID = 250μA
TJ = 125
VDS = 25V,
VGS = 0V
VDS = 25V, VGS = 0V,
TJ = 55°C
VGS =20V
VGS = -20V
ID = 30A,
VDS=12.5V,
VGS = 10V
VGS=10V, VDS=12.5V,
RL=0.42Ω,
RGEN=3Ω
VGS = 0V,
VDS = 12.5V,
ƒ = 1.0MHz
VGS=0V,VDS=0V,
f=1MHz
©Silikron Semiconductor CO.,LTD.
2011.02.25
www.silikron.com
Version : 1.2
page 2 of 9

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