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SSFM3008L डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET - Silikron

भाग संख्या SSFM3008L
समारोह MOSFET
मैन्युफैक्चरर्स Silikron 
लोगो Silikron लोगो 
पूर्व दर्शन
1 Page
		
<?=SSFM3008L?> डेटा पत्रक पीडीएफ

SSFM3008L pdf
                                
SSFM3008L 
Thermal Resistance
Symbol
RθJC
RθJA
Characterizes
Junction-to-case
Junction-to-ambient (t 10s)
Junction-to-Ambient (PCB mounted, steady-state)
Typ.
Max.
1.5
45
20
Units
/W
/W
/W
Electrical Characterizes @TA=25unless otherwise specified
Symbol
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
Drain-to-Source leakage current
Gate-to-Source forward leakage
Total gate charge
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
Turn-Off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
Min.
30
1
 
-100 
 
 
 
 
 
 
 
 
 
 
Typ.
36.5
5.0
7.5
 
 
35
7.9
8.7
11.5
46.5
25.8
6.5
2055
356
226
Max.
8
10
3
10
100
Units
V
m
m
V
μA
nA
nC
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID =20A
VGS=4.5V,ID =10A
VDS = VGS, ID = 250μA
VDS = 30V,VGS = 0V
VGS =20V
VGS = -20V
VDS=15V,
ID=20A,
VGS=10V
ns VGS=10V, VDS=15V,
RGEN=3, ID=20A
VGS = 0V
pF VDS = 15V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
Parameter
Continuous Source Current
ISM Pulsed Source Current
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
Typ.
——
— 0.5
— 12.4
— 11.7
Max.
50
200
1.0
Units
A
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
 
IS=1.0A, VGS=0V
TJ = 25°C, IF =20A, di/dt
= 300A/μs
©Silikron Semiconductor CO., LTD.
2011.11.05
www.silikron.com 
Version:1.0
page 2 of 8

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