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SSFD4024 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET - Silikron

भाग संख्या SSFD4024
समारोह MOSFET
मैन्युफैक्चरर्स Silikron 
लोगो Silikron लोगो 
पूर्व दर्शन
1 Page
		
<?=SSFD4024?> डेटा पत्रक पीडीएफ

SSFD4024 pdf
                                                     
SSFD4024 
Electrical Characterizes @TA=25unless otherwise specified
BVDSS
RDS(on)
VGS(th)
IDSS
Parameter
Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
Drain-to-Source leakage current
Min. Typ.
40 —
— 24
1—
——
——
Max Units
—V
30 m
3V
1
μA
150
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source forward leakage
Gate-to-Source reverse leakage
Total gate charge
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
Turn-Off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
   
100 nA
   
-100
  9.5
  4.5
  nC
  1.5
 
  3.5
 
  6
  ns
  13.5 — 
  3.5
 
  410 — 
  95
  pF
  35
 
Conditions
VGS = 0V, ID = 250μA
VGS = 10V, ID = 12A
VDS = VGS, ID = 250μA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ =
125°C
VGS = 20V
VGS = -20V
ID = 12A VDS =20V VGS =
10V
VDD = 20V ID = 12A RG = 1.7
VGS = 10V
VGS = 0V VDS = 20V ƒ =
1.0MHz
Source-Drain Ratings and Characteristics
IS
VSD
trr
Qrr
ton
Parameter
Continuous
Source Current
(Body Diode)
Diode Forward
Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Forward Turn-on
Time
Min. Typ. Max Units Conditions
MOSFET symbol
——
showing the
12 A
integral reverse
p-n junction diode.
— 0.75 1.0 V
TJ = 25°C, IF = 1A, VDD = 20V di/dt = 100A/μs
— 23 — ns
TJ = 25°C, IF = 12A, VDD = 20V di/dt = 100A/μs
— 18.5 — nC
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
©Silikron Semiconductor CO.,LTD.
 
2010.09.01
www.silikron.com 
Version : 1.0
page 2of4

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