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SSFD6046 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET - Silikron

भाग संख्या SSFD6046
समारोह MOSFET
मैन्युफैक्चरर्स Silikron 
लोगो Silikron लोगो 
पूर्व दर्शन
1 Page
		
<?=SSFD6046?> डेटा पत्रक पीडीएफ

SSFD6046 pdf
SSFD6046
Qg
Total gate charge
— 7.5 —
Qgs Gate-to-Source charge — 1.2 — nC
Qgd Gate-to-Drain("Miller") charge — 2 —
td(on) Turn-on delay time — 4.5 —
tr
Rise time
— 3.5 —
nS
td(off) Turn-Off delay time — 16 —
tf
Fall time
—2 —
Ciss Input capacitance — 450 —
Coss Output capacitance — 60 — pF
Crss Reverse transfer capacitance — 25 —
ID=12A
VDD=30V
VGS=10V
VDD=30V
ID=2A ,RL=2.5
RG=3
VGS=10V
VGS=0V
VDS=30V
f=1.0MHZ
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Test Conditions
Continuous Source Current
IS (Body Diode)
ISM
Pulsed Source Current
(Body Diode)
— 12
— 30
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
VSD Diode Forward Voltage
—— 1
V
trr Reverse Recovery Time
— 25 — nS
Qrr Reverse Recovery Charge
30
nC
TJ=25ْC,IS=1A,VGS=0V
TJ=25ْC,IF=12A
di/dt=100A/μs
ton Forward Turn-on Time
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
Repetitive rating; pulse width limited by max junction temperature.
Test condition: L =0.1mH, VDD = 40V,Id=10A
Pulse width300μS, duty cycle1.5% ; RG = 25Ω Starting TJ = 25°C
©Silikron Semiconductor Corporation
2010.09.01
Version: 1.1
page 2of4

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