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SSFM8005 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET - Silikron

भाग संख्या SSFM8005
समारोह MOSFET
मैन्युफैक्चरर्स Silikron 
लोगो Silikron लोगो 
पूर्व दर्शन
1 Page
		
<?=SSFM8005?> डेटा पत्रक पीडीएफ

SSFM8005 pdf
                                
SSFM8005 
Electrical Characterizes @TA=25unless otherwise specified
Symbol Parameter
Min. Typ. Max Units Conditions
BVDSS
Drain-to-Source breakdown
voltage
80
—V
VGS = 0V,
ID = 250μA
RDS(on) Static Drain-to-Source
on-resistance
— 4.5 5
VGS = 10V,
m
ID = 20A
VGS(th) Gate threshold voltage
23
4V
VDS = VGS,
ID = 250μA
IDSS
Drain-to-Source leakage current
10
VDS = 80V,
VGS = 0V
μA VDS =80V,
——
50
VGS = 0V,
TJ = 55°C
IGSS
Gate-to-Source forward leakage —   
Gate-to-Source reverse leakage -100 — 
100
nA
VGS =25V
VGS = -25V
gFS Forward Transconductance
37 S VDS=5V, ID=20A
Qg Total gate charge
  96
120
Qgs Gate-to-Source charge
  29
36 
VGS=10V,
nC
Qgd
Gate-to-Drain("Miller") charge —  27
36 
VDS=40V,
Qg(th) Gate charge at shreshold
— 18
24
ID=20A
Vplateau gate plateau voltage
— 5.28 6.2 V
td(on)
Turn-on delay time
  24.8 — 
VGS=10V,
tr
td(off)
Rise time
Turn-Off delay time
  12.2 — 
ns
  88
 
VDS=40V,
RL=15,
tf Fall time
  34
 
RGEN=2.5
Ciss Input capacitance
  6286 — 
VGS=0V,
Coss
Output capacitance
  670 —  pF
VDS=40V,
Crss
Reverse transfer capacitance
  204 — 
f=1MHz
Rg Gate resistance
——
0.5 Ω
VGS=0V, VDS=0V,
f=1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
Parameter
Maximum Body-Diode
Continuous Curren
Min. Typ. Max Units Conditions
180 A
VSD
trr
Qrr
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-on Time
0.63 1 V IS=1A, VGS=0V
41 — ns IF=20A,
65 — nC dI/dt=100A/μs
Intrinsic turn-on time is negligible
(turn-on is dominated by LS+LD)
©Silikron Semiconductor CO.,LTD.
 
2010.12.14
www.silikron.com 
Version : 3.0
page 2of7

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