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VS-25TTS16SPbF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Phase Control SCR - Vishay

भाग संख्या VS-25TTS16SPbF
समारोह Phase Control SCR
मैन्युफैक्चरर्स Vishay 
लोगो Vishay लोगो 
पूर्व दर्शन
1 Page
		
<?=VS-25TTS16SPbF?> डेटा पत्रक पीडीएफ

VS-25TTS16SPbF pdf
www.vishay.com
VS-25TTS16SPbF
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
Maximum RMS on-state current
Maximum peak, one-cycle,
non-repetitive surge current
IT(AV)
IRMS
ITSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
Maximum on-state voltage drop
On-state slope resistance
Threshold voltage
Maximum reverse and direct leakage current
I2t
VTM
rt
VT(TO)
IRM/IDM
Holding current
Maximum latching current
Maximum rate of rise of off-state voltage
Maximum rate of rise of turned-on current
IH
IL
dV/dt
dI/dt
TEST CONDITIONS
VALUES
TYP. MAX.
TC = 93 °C, 180° conduction half sine wave
16
25
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
300
350
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
450
630
t = 0.1 ms to 10 ms, no voltage reapplied
6300
16 A, TJ = 25 °C
TJ = 125 °C
1.25
12.0
1.0
TJ = 25 °C
TJ = 125 °C
VR = Rated VRRM/VDRM
Anode supply = 6 V,
resistive load, initial IT = 1 A, TJ = 25 °C
Anode supply = 6 V, resistive load, TJ = 25 °C
TJ = TJ max., linear to 80 %, VDRM = Rg - k = Open
0.5
10
- 150
200
500
150
UNITS
A
A2s
A2s
V
m
V
mA
V/μs
A/μs
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
Maximum required DC gate current to trigger
Maximum required DC gate voltage to trigger
Maximum DC gate voltage not to trigger
Maximum DC gate current not to trigger
SYMBOL
PGM
PG(AV)
+ IGM
- VGM
IGT
VGT
VGD
IGD
TEST CONDITIONS
Anode supply = 6 V, resistive load, TJ = - 10 °C
Anode supply = 6 V, resistive load, TJ = 25 °C
Anode supply = 6 V, resistive load, TJ = 125 °C
Anode supply = 6 V, resistive load, TJ = - 10 °C
Anode supply = 6 V, resistive load, TJ = 25 °C
Anode supply = 6 V, resistive load, TJ = 125 °C
TJ = 125 °C, VDRM = Rated value
VALUES
8.0
2.0
1.5
10
60
45
20
2.5
2.0
1.0
0.25
2.0
UNITS
W
A
V
mA
V
mA
SWITCHING
PARAMETER
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
SYMBOL
tgt
trr
tq
TJ = 25 °C
TEST CONDITIONS
TJ = 125 °C
VALUES
0.9
4
110
UNITS
μs
Revision: 09-Jul-15
2 Document Number: 94679
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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