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TIP102 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Monolithic Construction - SemiHow

भाग संख्या TIP102
समारोह Monolithic Construction
मैन्युफैक्चरर्स SemiHow 
लोगो SemiHow लोगो 
पूर्व दर्शन
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<?=TIP102?> डेटा पत्रक पीडीएफ

TIP102 pdf
TIP100/101/102
Monolithic Construction With Built In
Base-Emitter Shunt Resistors
- High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.)
- Collector-Emitter Sustaining Voltage
- Low Collector-Emitter Saturation Voltage
- Industrial Use
- Complementary to TIP105/106/107
Absolute Maximum Ratings Ta=25unless otherwise noted
CHARACTERISTICS
SYMBOL RATING UNIT
Collector-Base Voltage : TIP100
: TIP101
: TIP102
VCBO
60
80
100
V
V
V
Collector-Emitter Voltage : TIP100
: TIP101
: TIP102
VCEO
60
80
100
V
V
V
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
Collector Dissipation(Ta=25)
Collector Dissipation(Tc=25)
Junction Temperature
Storage Temperature
VEBO
IC
ICP
IB
PC
PC
TJ
TSTG
5
8
15
1
2
80
150
-65~150
V
A
A
A
W
W
NPN Epitaxial
Silicon Darlington
Transistor
Equivalent Circuit
TO-220
1. Base
2. Collector
3. Emitter
12 3
Electrical Characteristics Ta=25unless otherwise noted
CHARACTERISTICS
SYMBOL
Test Condition
Collector-Emitter Sustaining Voltage
: TIP100
: TIP101
: TIP102
VCEO(SUS)
IC=30mA, IB=0
Collector Cut-off Current
: TIP100
: TIP101
: TIP102
Collector Cut-off Current
: TIP100
: TIP101
: TIP102
Emitter Cut-off Current
DC Current Gain
ICEO
ICBO
IEBO
hFE
Collector-Emitter Saturation Voltage
VCE(sat)
Base-Emitter ON Voltage
Output Capacitance
* Pulse Test: PW300us, Duty Cycle2%
VBE(on)
Cob
VCE=30V,IB=0
VCE=40V,IB=0
VCE=50V,IB=0
VCE=60V,IE=0
VCE=80V,IE=0
VCE=100V,IE=0
VEB=5V,IC=0
VCE=4V,IC=3A
VCE=4V,IC=8A
IC=3A,IB=6mA
IC=8A,IB=80mA
VCE=4V,IC=8A
VCB=10V,IE=0, f=0.1MHz
Min
Max
Unit
60 V
80 V
100 V
1000
200
50
50
50
50
50
50
2
20000
2
2.5
2.8
200
V
V
V
SEMIHOW REV.A0,Oct 2007

विन्यास 5 पेज
डाउनलोड[ TIP102 Datasheet.PDF ]


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