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TSU2N60MZ डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel MOSFET - Truesemi

भाग संख्या TSU2N60MZ
समारोह N-Channel MOSFET
मैन्युफैक्चरर्स Truesemi 
लोगो Truesemi लोगो 
पूर्व दर्शन
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<?=TSU2N60MZ?> डेटा पत्रक पीडीएफ

TSU2N60MZ pdf
TSD2N60MZ / TSU2N60MZ
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
600 -- -- V
BVDSS Breakdown Voltage Temperature
/ TJ Coefficient
ID = 250 µA, Referenced to 25°C -- 0.7 -- V/°C
IDSS Zero Gate Voltage Drain Current
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
-- -- 1 µA
-- -- 10 µA
IGSSF
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
-- -- 100 nA
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
-- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 0.95 A
2.0 --
-- 4.1
4.0
5.0
V
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 200
-- 20
-- 4
--
--
--
pF
pF
pF
VDD = 300 V, ID = 2.0A,
RG = 25
(Note 4, 5)
VDS = 480 V, ID = 2.0 A,
VGS = 10 V
(Note 4, 5)
--
--
--
--
--
--
--
10
25
25
30
9
1.5
4.0
--
--
--
--
-
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 1.9
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.9 A
-- -- 7.6
-- -- 1.4
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 2.0 A,
dIF / dt = 100 A/µs
(Note 4)
--
--
230
1.0
--
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 56 mH, IAS = 2.0 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 2.0 A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
A
A
V
ns
µC

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डाउनलोड[ TSU2N60MZ Datasheet.PDF ]


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