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TSP80R600S1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel MOSFET - Truesemi

भाग संख्या TSP80R600S1
समारोह N-Channel MOSFET
मैन्युफैक्चरर्स Truesemi 
लोगो Truesemi लोगो 
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<?=TSP80R600S1?> डेटा पत्रक पीडीएफ

TSP80R600S1 pdf
Electrical Characteristics TC = 25unless otherwise noted
Symbol
Off Characteristics
BVDSS
ΔBVDSS / ΔTJ
IDSS
IGSSF
IGSSR
On Characteristics
VGS(th)
RDS(on)
gFS
Rg
Parameter
Conditions
Min Typ Max
Drain-Source Breakdown
Voltage
VGS = 0V, ID = 250µA,
TJ = 25
VGS = 0V, ID = 250µA,
TJ = 150
Breakdown Voltage
Temperature Coefficient
ID = 250µA, Referenced to
25
Zero Gate Voltage Drain
Current
VDS = 800V, VGS = 0V
TC = 25
-TC = 150
Gate-Body Leakage Current,
Forward
VGS = 30V, VDS = 0V
800
--
--
--
--
--
850
0.6
--
10
--
--
--
--
1
--
100
Gate-Body Leakage Current,
Reverse
VGS = -30V, VDS = 0V
-- -- -100
Gate Threshold Voltage
Static Drain-Source On-
Resistance
VDS = VGS, ID = 250µA
VGS = 10V, ID = 4.5A
Forward Trans conductance VDS = 40V, ID = 9A
Gate resistance
f=1MHz,open drain
2.5 3.5
-- 0.55
4.5
0.6
-- 8
-- 4.5
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss
Reverse Transfer
Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
-- 550
-- 140
-- 7
--
--
--
Unit
V
V
V/
µA
µA
nA
nA
V
Ω
S
Ω
pF
pF
pF
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 400V, ID = 4.5A
RG = 20Ω(Note 4)
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg
Total Gate Charge
VDS = 480V, ID = 4.5A
Qgs
Gate-Source Charge
VGS = 10V (Note 4)
Qgd Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward
Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward
Voltage
VGS = 0V, IF = 4.5A
trr
Reverse Recovery Time
VGS = 0V, IF = 4.5A
Qrr Reverse Recovery Charge diF/dt =100A/µs
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS=2A, VDD=50V, Starting TJ=25
3. ISD≤9A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25
4. Essentially Independent of Operating Temperature Typical Characteristics
© 2015 Truesemi Semiconductor Corporation
-- 15 -- ns
-- 10 -- ns
-- 110 --
ns
-- 9
-- ns
-- 35 -- nC
-- 3.8 -- nC
-- 4
-- nC
-- --
-- --
-- 0.9
-- 240
-- 3.1
9
16
1.5
--
--
A
A
V
ns
µC
2
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डाउनलोड[ TSP80R600S1 Datasheet.PDF ]


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भाग संख्याविवरणविनिर्माण
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