DataSheet.in

TSU60R650S1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel MOSFET - Truesemi

भाग संख्या TSU60R650S1
समारोह N-Channel MOSFET
मैन्युफैक्चरर्स Truesemi 
लोगो Truesemi लोगो 
पूर्व दर्शन
1 Page
		
<?=TSU60R650S1?> डेटा पत्रक पीडीएफ

TSU60R650S1 pdf
Electrical Characteristics TC = 25unless otherwise noted
Symbol
Parameter
Conditions
Min
Off Characteristics
BVDSS
ΔBVDSS / ΔTJ
IDSS
IGSSF
IGSSR
On Characteristics
VGS(th)
RDS(on)
Drain-Source Breakdown
Voltage
VGS = 0V, ID = 250µA,
TJ = 25
VGS = 0V, ID = 250µA,
TJ = 150
Breakdown Voltage
Temperature Coefficient
ID = 250µA, Referenced to
25
Zero Gate Voltage Drain
Current
VDS = 600V, VGS = 0V
TC = 25
VDS = 480V, VGS = 0V
TC = 125
Gate-Body Leakage Current,
Forward
VGS = 30V, VDS = 0V
Gate-Body Leakage Current,
Reverse
VGS = -30V, VDS = 0V
600
--
--
--
--
--
Gate Threshold Voltage
Static Drain-Source On-
Resistance
VDS = VGS, ID = 250µA
VGS = 10V, ID = 3.5A
2.5
--
gFS Forward Trans conductance VDS = 40V, ID = 3.5A (Note 4)
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss
Reverse Transfer
Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
Switching Characteristics
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 400V, ID = 3.5A
RG = 20Ω(Note 4, 5)
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg
Total Gate Charge
VDS = 480V, ID = 3.5A
Qgs
Gate-Source Charge
VGS = 10V (Note 4, 5)
Qgd Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward
Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward
Voltage
VGS = 0V, IF = 7A
trr
Reverse Recovery Time
VGS = 0V, IF = 7A
Qrr Reverse Recovery Charge diF/dt =100A/µs (Note 4)
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ
--
650
0.6
--
--
--
3.5
0.58
16
360
25
1.2
25
55
70
40
25
2.0
2.7
--
--
--
190
2.3
Max
--
--
--
1
10
100
-100
4.5
0.65
--
--
--
--
--
--
--
--
--
--
--
7
18
1.5
--
--
Unit
V
V
V/
µA
µA
nA
nA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
V
ns
µC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=60mH ,IAS=1.7A, VDD=50V, Starting TJ=25
3. ISD≤7A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25
4. Pulse Test: Pulse width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
© 2015 Truesemi Semiconductor Corporation
2
www.truesemi.com

विन्यास 9 पेज
डाउनलोड[ TSU60R650S1 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
TSU60R650S1N-Channel MOSFETTruesemi
Truesemi


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English