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TSU65R2K3S1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel MOSFET - Truesemi

भाग संख्या TSU65R2K3S1
समारोह N-Channel MOSFET
मैन्युफैक्चरर्स Truesemi 
लोगो Truesemi लोगो 
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TSU65R2K3S1 pdf
Electrical Characteristics TC = 25unless otherwise noted
Symbol
Parameter
Conditions
Min Typ Max
Off Characteristics
BVDSS
ΔBVDSS / ΔTJ
IDSS
IGSSF
IGSSR
On Characteristics
VGS(th)
RDS(on)
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
VGS = 0V, ID = 250µA,
TJ = 25
VGS = 0V, ID = 250µA,
TJ = 150
ID = 250µA, Referenced to
25
VDS = 650V, VGS = 0V
-TJ = 150
650
--
--
--
--
700
0.6
--
10
--
--
--
1
--
Gate-Body Leakage Current,
Forward
VGS = 30V, VDS = 0V
-- -- 100
Gate-Body Leakage Current,
Reverse
VGS = -30V, VDS = 0V
-- -- -100
Gate Threshold Voltage
Static Drain-Source On-
Resistance
VDS = VGS, ID = 250µA
VGS = 10V, ID = 1A
2.5 --
-- 2.1
4.5
2.3
gFS
Forward Trans conductance VDS = 40V, ID = 1A (Note 4)
-- 8
--
Rg
Gate resistance
f=1 MHz, open drain
-3
-
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 25V, VGS = 0V,
Coss
Output Capacitance
f = 1.0MHz
Crss
Reverse Transfer
Capacitance
Switching Characteristics
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 400V, ID = 1A
RG = 20Ω(Note 4, 5)
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg
Total Gate Charge
VDS = 480V, ID = 1A
Qgs
Gate-Source Charge
VGS = 10V (Note 4, 5)
Qgd Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward
Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward
Voltage
VGS = 0V, IF = 1A
trr
Reverse Recovery Time
VGS = 0V, IF = 1A
Qrr Reverse Recovery Charge diF/dt =100A/µs (Note 4)
-- 130
-- 40
-- 3
--
--
--
-- 7
-- 7
-- 30
-- 50
-- 8
-- 0.8
-- 3.6
--
--
--
--
--
--
--
-- --
-- --
-- 0.9
-- 150
-- 1.2
2
6
1.5
--
--
Unit
V
V
V/
µA
µA
nA
nA
V
Ω
S
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
V
ns
µC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS=0.4A , VDD=150V, Starting TJ=25
3. ISD≤2.1A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25
4. Pulse Test: Pulse width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
© 2015 Truesemi Semiconductor Corporation
2
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