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TSU65R380WT डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel MOSFET - Truesemi

भाग संख्या TSU65R380WT
समारोह N-Channel MOSFET
मैन्युफैक्चरर्स Truesemi 
लोगो Truesemi लोगो 
पूर्व दर्शन
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<?=TSU65R380WT?> डेटा पत्रक पीडीएफ

TSU65R380WT pdf
Electrical Characteristics TJ = 25unless otherwise noted
Symbol
Parameter
Conditions
Off Characteristics
BVDSS
IDSS
IGSS
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
VGS = 0V, ID = 250µA,
VDS = 650V, VGS = 0V
TJ = 25
VDS = 520V, VGS = 0V
TJ = 125
Gate-Body Leakage Current, VGS = ±30V, VDS = 0V
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source On-
Resistance
VDS = VGS, ID = 250µA
VGS = 10V, ID = 3.2A
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 50V, VGS = 0V,
Coss
Output Capacitance
f = 1.0MHz
Crss
Reverse Transfer
Capacitance
Switching Characteristics
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDS = 325V, ID = 11A
RG = 25Ω
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg
Total Gate Charge
VDS = 520V, ID = 11A
Qgs
Gate-Source Charge
VGS = 10V
Qgd Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward
Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward
Voltage
VGS = 0V, IF = 11A
trr
Qrr
Reverse Recovery Time
Reverse Recovery Charge
VGS = 0V, IF = 11A
diF/dt =100A/µs
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS=3.5A, VDD=50V, RG=25ΩStarting TJ=25
3. Pulse Test: Pulse width ≤ 300us, Duty Cycle ≤ 2%
Min Typ Max Unit
650 -- --
V
10
-- --
100
µA
µA
-- -- ±100 nA
2.0 -- 4.0
-- 0.33 0.38
V
Ω
-- 900 1170
-- 54 70
-- 7.0 9.5
pF
pF
pF
-- 30 70
-- 17 44
-- 70 150
-- 17 44
-- 17.5 23
-- 5.0 --
-- 5.5 --
ns
ns
ns
ns
nC
nC
nC
-- --
-- --
-- --
-- 220
-- 2.0
11
33
1.4
--
--
A
A
V
ns
µC
© 2015 Truesemi Semiconductor Corporation
2
www.truesemi.com

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डाउनलोड[ TSU65R380WT Datasheet.PDF ]


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