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VLIN26A1-03G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Single-Line ESD-Protection Diode - Vishay

भाग संख्या VLIN26A1-03G
समारोह Single-Line ESD-Protection Diode
मैन्युफैक्चरर्स Vishay 
लोगो Vishay लोगो 
पूर्व दर्शन
1 Page
		
<?=VLIN26A1-03G?> डेटा पत्रक पीडीएफ

VLIN26A1-03G pdf
www.vishay.com
VLIN26A1-03G
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (pin 1 to 3, 3 to 1)
(Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITIONS/REMARKS
Protection paths
Number of lines which can be protected
Reverse stand-off voltage
Max. reverse working voltage
Reverse voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Capacitance
At IR = 0.05 μA
At VRWM = 26.5 V
At IR = 1 mA
At IPP 1 A; tp = 8/20 μs
At IPP = IPPM = 3 A; tp = 8/20 μs
At VR = 0 V, f = 1 MHz
SYMBOL
Nchannel
VRWM
VR
IR
VBR
VC
VC
CD
MIN.
-
-
26.5
-
28
-
-
-
TYP.
-
-
-
-
30
32
38
10
MAX.
1
26.5
-
0.05
32
40
50
15
UNIT
lines
V
V
μA
V
V
V
pF
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
120 %
100 %
Rise time = 0.7 ns to 1 ns
12
f = 1 MHz
10
80 %
8
60 %
53 %
40 %
27 %
20 %
6
4
2
0%
-10 0 10 20 30 40 50 60 70 80 90 100
20557
Time (ns)
Fig. 1 - ESD Discharge Current Wave Form
acc. IEC 61000-4-2 (330 / 150 pF)
0
-30 -20 -10 0
10 20 30
22763
VR (V)
Fig. 3 - Typical Capacitance CD vs. Reverse Voltage VR
100 %
8 µs to 100 %
80 %
60 %
40 %
20 µs to 50 %
20 %
0%
0
20548
10 20 30
Time (µs)
40
Fig. 2 - 8/20 μs Peak Pulse Current Wave Form
acc. IEC 61000-4-5
35
Pin 1-3 or 3-1
30
25
20
15
10
5
0
0.001
22764
0.1 10
IR (μA)
1000
Fig. 4 - Typical Reverse Voltage VR vs. Reverse Current IR
Rev. 1.2, 23-Feb-16
2 Document Number: 85895
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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