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DMP3007SPS डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMP3007SPS
समारोह P-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
पूर्व दर्शन
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DMP3007SPS pdf
DMP3007SPS
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current, VGS = -10V (Note 7)
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L=1mH (Note 8)
Avalanche Energy, L=1mH (Note 8)
TC = +25°C
TC = +70°C
Symbol
VDSS
VGSS
ID
IS
IDM
IAS
EAS
Value
-30
±25
-90
-70
-90
-160
-16
130
Unit
V
V
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
TA = +25°C
Steady State
TA = +25°C
Steady State
TC = +25°C
Symbol
PD
RJA
PD
RJA
PD
RJC
TJ, TSTG
Value
1.4
90
2.7
47
80
1.5
-55 to +150
Unit
W
°C/W
W
°C/W
W
°C/W
°C
Electrical Characteristics (TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol Min
BVDSS
IDSS
IGSS
-30
VGS(TH)
RDS(ON)
VSD
-1.0
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Typ
4.5
12
-0.7
2,826
606
305
23
31.2
64.2
10.6
11.6
4.8
4.3
306
125
19
9.8
Max
-1
±10
-3.0
7
16
-1.2
Unit
Test Condition
V VGS = 0V, ID = -250μA
μA VDS = -24V, VGS = 0V
μA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = -250μA
mVGS = -10V, ID = -15A
VGS = -4.5V, ID = -10A
V VGS = 0V, IS = -1A
pF
pF VDS = -15V, VGS = 0V,
f = 1.0MHz
pF
VDS = 0V, VGS = 0V, f = 1.0MHz
nC
nC
nC VDS = -15V, ID = -11.5A
nC
ns
ns VDD = -15V, VGS = -10V,
ns Rg = 6, ID = -11.5A
ns
ns
nC IS = -11.5A, dI/dt = 100A/μs
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
DMP3007SPS
Document number: DS39051 Rev.3 - 2
2 of 7
www.diodes.com
September 2016
© Diodes Incorporated

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